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1 Russian Research Center “Kurchatov Institute”, Moscow, Russia

Anomalous magnetism and 209 Bi nuclear spin relaxation in Bi 4 Ge 3 O 12 crystals V.G. Orlov 1 , E.A. Kravchenko 2 , Tetsuo Asaji 3 , G.S. Sergeev 1 , Yu.F. Kargin 4 , A.N. Vasil’ev 5 , O.S. Volkova 5. 1 Russian Research Center “Kurchatov Institute”, Moscow, Russia

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1 Russian Research Center “Kurchatov Institute”, Moscow, Russia

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  1. Anomalous magnetism and 209Bi nuclear spin relaxation in Bi4Ge3O12 crystalsV.G. Orlov1, E.A. Kravchenko2, Tetsuo Asaji3, G.S. Sergeev1, Yu.F. Kargin4, A.N. Vasil’ev5, O.S. Volkova5 1Russian Research Center “Kurchatov Institute”, Moscow, Russia 2Institute of General and Inorganic Chemistry, Moscow, Russia 3Department of Chemistry, College of Humanities and Sciences, Nihon University, Tokyo, Japan 4State Institute of Metallurgy and Material Science, Moscow, Russia 5Lomonosov Moscow State University, Moscow, Russia

  2. BikAlOmXn (A =Al, B, Ge, Ba; X = Cl, Br) Hloc≤250 G ; E.A. Kravchenko, V.G. Orlov, M.P. Shlykov Russian Chem. Rev.75 (2006) E.A. Kravchenko, V.G. Orlov et al.,JETP Lett.86 (2007)

  3. α-Bi2O3 V.I. Nizhankovskii, A.I. Kharkovskii, V.G. Orlov Ferroelectrics279 (2002) T = 4.2 K;H || c;▲– ZFC; □ – FC, H = 284 Oe; Δ – FC, H = 566 Oe;

  4. α-Bi2O3V.I. Nizhankovskii, A.I. Kharkovskii, V.G. OrlovFerroelectrics279 (2002)

  5. In2Tepowder 77K In(1) ν2=15.12 MHz

  6. Bi4Ge3O12 E.A. Kravchenko, Yu.F. Kargin, V.G. Orlov, T. Okuda, K. Yamada, JMMM 224(2001) E.A. Kravchenko, V.G. Orlov et al., JETP Lett.86 (2007)

  7. Bi4Ge3O12 E.A. Kravchenko, V.G. Orlov et al.,JETP Lett.86 (2007) , Pure, H=0 Pure, H=30 Oe Gd-doped Nd-doped Pr-doped T2μsec 50100220400400

  8. Bi4Ge3O12 V.G. Orlov T. Asaji E.A. Kravchenko et al. JETP137 (2010)

  9. Gd-doped Bi4Ge3O12

  10. meV 25 20 5 Δ 0 Nd-doped Bi4Ge3O12

  11. Conclusion • A strong influence of minor amounts of paramagnetic dopand atoms on the relaxation processes of the 209Bi nuclear spin was observed forBi4Ge3O12crystals. • Both weak external magnetic field and paramagnetic atoms inserted into the crystal lattice of Bi4Ge3O12 result in considerably increasing spin-spin relaxation time T2. • In pureBi4Ge3O12 crystal, intrinsic paramagnetic centers are found to exist which decrease the spin-lattice relaxation time T1 at low temperature. • The crystal electric field splits the ground multiplet of the paramagnetic dopants and results in non-monotonous dependence of spin-lattice relaxation time T1 on temperature in the temperature interval 4.2-77 K.

  12. m ±9/2 ν4 ±7/2 ν3 ±5/2 ν2 ±3/2 ν1 ±1/2 Bi4Ge3O12 209BiI = 9/2 H = 0

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