1 / 15

EBL Structure

EBL Structure. Structure 1. N-EBL. Barrier. Well. Al0.17Ga0.83 Al0.25Ga0.75 Al0.17Ga0.83. Structure 2. P -EBL. P-Barrier. P-Barrier. P-Barrier. Well. Structure 3. P -EBL. N-EBL. P-Barrier. P-Barrier. P-Barrier. Well. Structure 4. 20nm Al 0.2 Ga 0.8 N.

amos-branch
Download Presentation

EBL Structure

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. EBL Structure

  2. Structure 1 N-EBL Barrier Well Al0.17Ga0.83 Al0.25Ga0.75 Al0.17Ga0.83

  3. Structure 2 P-EBL P-Barrier P-Barrier P-Barrier Well

  4. Structure 3 P-EBL N-EBL P-Barrier P-Barrier P-Barrier Well

  5. Structure 4 20nm Al0.2Ga0.8N p-EBL GaN InGaN p-GaN 2nm Al0.05Ga0.95N

  6. Structure 5 Al0.2Ga0.8N 5nm n-GaN MQW Superlattice n-EBL Al0.1Ga0.9N/GaN 3nm/1nm 5pair

  7. Structure 6 20nm Al 含量 0%~25%~0% p-EBL GaN p-GaN InGaN

  8. Structure 7 p-AlGaN Original structure MQW(GaN/InGaN) n-GaN p-GaN p-AlGaN New structure p-GaN MQW(GaN/InGaN) 透過在MQW與EBL間插入一層AlGaNsuperlattice,做為緩衝last barrier 與EBL lattice mismatch 所帶來能帶傾斜的效應!!進而增加EBL有效的能障高度… n-GaN

  9. Structure 8 p-AlGaN Original structure MQW(GaN/InGaN) p-GaN n-GaN New structure p-type p-GaN n-GaN n-type 在last barrier 做一n參雜,目的在於形成一空乏區內建電場!透過PN面空乏區電場來去抵補極化場!!

  10. 極化場方向 內建電場方向

  11. Structure 9 p-AlGaN Original structure MQW(GaN/InGaN) p-GaN n-GaN EBL InGaN barrier GaN+last barrier New structure A p-type MQW(InGaN/InGaN) n-GaN 在QW中使用InGaN/InGaN,增加晶格與晶格間的長晶匹配並在最後Last barrier處 做一 GaN的能帶調變,目的在改善與最後的Al-GaN 晶格missmatch!! 藉此改善 晶格間的極化效應。 Graded-GaN

  12. EBL InGaN barrier P-GaN+last barrier MQW(InGaN/InGaN) New structure B p-type Graded P-GaN n-GaN

  13. EBL InGaN barrier P-GaN+last barrier MQW(InGaN/InGaN) New structure C p-type Graded P-GaN n-GaN SuperLattice

  14. Reference • Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes Sheng-Horng Yen, Miao-Chan Tsai, Meng-Lun Tsai, Yu-JiunShen, Ta-Cheng Hsu, and Yen-KuangKuoIEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 21, NO. 14, JULY 15, 2009 975 • Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer Yu-Hsuan Lu, Yi-Keng Fu, Shyh-Jer Huang, Yan-Kuin Su, RongXuan et al. • Enhancing the performance of green GaN-based light-emitting diodes with graded superlatticeAlGaN/GaN inserting layer Junjie Kang, Hongjian Li, Zhi Li, Zhiqiang Liu, Ping Ma, Xiaoyan Yi, and Guohong Wang

  15. Thanks for your attention

More Related