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Co-sensitized quantum dot solar cell based on ZnO nanowire

Applied Surface Science 256 (2010) 7438–7441. Co-sensitized quantum dot solar cell based on ZnO nanowire. a School of Electronic Science and Engineering, Southeast University, Sipai Lou 2#, JinLing Yuan 109, Nanjing 210096, China

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Co-sensitized quantum dot solar cell based on ZnO nanowire

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  1. Applied Surface Science 256 (2010) 7438–7441 Co-sensitized quantum dot solar cell based on ZnOnanowire a School of Electronic Science and Engineering, Southeast University, Sipai Lou 2#, JinLing Yuan 109, Nanjing 210096, China b Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore c School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore a. J. Chena, J. Wua, W. Leia, b. J.L. Songb, W.Q. Dengb, c. X.W. Sunc Speaker:H. C. Chen Advisor:H. C. Kuo

  2. Outline • Introduction • Experiment • Results and Discussion • Conclusions

  3. Introduction • CdS and CdSe QDs co-sensitized solar cell based on ZnO nanowire were studied in this work. • The co-sensitized structure has better performance than the single CdS or CdSe sensitized solar cell. • The power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell • Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms).

  4. Experiment • ZnO nanowire was grown by a hydrothermal method at 95 ◦C. • The chemical bath deposition (CBD) method was used to assemble CdS QDs onto ZnO film. • ZnO film with CdS QDs immersed into pre-synthesized CdSe ethanol solution for 6 h. • The ZnO/CdS and ZnO/CdS/CdSephotoelectrodeswere assembled with a 20 nm platinum-coated indium tin oxide (ITO) substrate as the counter electrode. • They measured I-Vcurve , EQE , and EIS to analyze this cell. electrolyte Zno/Cds/CdSe ITO

  5. Results and Discussion • It can be seen that the optical range of ZnO/CdS/CdSe is broader than ZnO/CdS and ZnO/CdSe. • Both the conduction and valence bands positions of the three materials increase in the order: ZnO < CdS < CdSe, which is benefit for the electrons to transfer.

  6. Results and Discussion – SEM & TEM • ZnO nanostructure consists of nanorodarray on the bottom and the finer wires with 50nm in diameter and 9–10 µm length on the top.

  7. Results and Discussion – J-V curve • The higher performance of ZnO/CdS/CdSe is attributed to its broader light absorption range which leads to a higher photocurrent.

  8. Results and Discussion - EIS • The electron lifetime is calculated to be 6.2 and 13.8ms for ZnO/CdS and ZnO/CdS/CdSe device. • It is possibly due to the better coverage of ZnO/CdS/CdSephotoelectrode

  9. Conclusions • ZnO/CdS/CdSe has a better performance than ZnO/CdS, which is attributed to its broader light absorption range and better coverage of QDs on ZnO nanowires. • EIS measured demonstrated longer electron lifetime for ZnO/CdS/CdSe than ZnO/CdS. • A PCE of 1.42% was achieved for ZnO/CdS/CdSe, which accounts for 54% improvement compared to ZnO/CdS device.

  10. Thanks for your attention~

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