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MOCVD of Alternative Materials

MOCVD of Alternative Materials. Smuruthi Kamepalli Jeff Fournier April 2009. Introduction. Primarily our effort focuses on Chemical vapor deposition of thin films of new materials which are conformal in nature and provide the ability to fill small pores.

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MOCVD of Alternative Materials

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  1. MOCVD of Alternative Materials Smuruthi Kamepalli Jeff Fournier April 2009

  2. Introduction Primarily our effort focuses on Chemical vapor deposition of thin films of new materials which are conformal in nature and provide the ability to fill small pores. Conformal thin films can be utilized in more flexible and competitive device structures. • MOCVD • Plasma-enhanced MOCVD • ALD • Plasma-assisted ALD

  3. In house capabilities: Thin film growth - Single wafer multiple chamber CVD System • State of the art tool capable of accommodating up to 8” wafers and incorporates a great deal of flexibility to deposit a wide range of materials. MOCVD chamber • Chamber utilized for the deposition of barrier layers, contacts, and other thin films. • Stainless steel Process chamber with water-cooled chamber walls • Showerhead assembly with temperature controlled fluid channel with 3 radial reactant injection zones • High-speed susceptor rotation • Susceptor capable of temperatures up to 800C

  4. CVD Cluster Tool OTI Ovonyx Confidential

  5. Cluster tool with three process chambersMOCVD chamber PECVD chamber Sputter etch chamber

  6. PECVD chamber • Chamber utilized for deposition or pre/post plasma treatment of films. • Water cooled showerhead assembly and heated chamber walls. Organometallic precursor sources and delivery system • System contains dual MO source delivery systems to accommodate a total of six MO source containers-3-bubbler input and 3 liquid MO sources through direct inject. Showerhead assembly with temperature controlled fluid channel with 3 radial reactant injection zones • Non-rate limited ALD type pulsed-deposition capability

  7. Precursor Chemistry Organometallic Precursors • Compounds, which possess direct bonds between metal and carbon. • The chemistry lab is equipped to perform synthesis and characterization of metal-organic precursors.

  8. Requirements For Precursor • High vapor pressure • Stable (low contamination) • Low decomposition temperature for thermal pyrolysis • Low thermal stability of precursor • Compatibility with other precursors used indeposition • Stable for storage • Easy to synthesize

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