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FVTX dEdx digitization

FVTX dEdx digitization. Zhengyun You Peking University Los Alamos National Lab Jun 05, 2007. 300 µm. 75 µm / strip. eStrip4. eStrip3. eStrip2. eStrip1. Charge sharing on strips. From position in and out to get a hit’s length on each strip;.

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FVTX dEdx digitization

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  1. FVTX dEdx digitization Zhengyun You Peking University Los Alamos National Lab Jun 05, 2007

  2. 300 µm 75 µm / strip eStrip4 eStrip3 eStrip2 eStrip1 Charge sharing on strips From position in and out to get a hit’s length on each strip; Digitize hit’s energy loss by length on each strip;

  3. E loss distribution E loss on a layer; E loss on a strip; pT = 2GeV Kaon pT = 2GeV Kaon µ from W pT > 10GeV µ from W pT > 10GeV ADC ADC

  4. Digitization Digitize with 3 bit [1500, 30000] E loss on a layer Sum of E loss on strips (after digi) 18500 µ from W pT > 10GeV pT = 2GeV Kaon pT = 2GeV Kaon µ from W pT > 10GeV ADC ADC

  5. Digitization Digitize with 4 bit [1500, 30000] E loss on a layer Sum of E loss on strips (after digi) 18500 pT = 2GeV Kaon pT = 2GeV Kaon µ from W pT > 10GeV µ from W pT > 10GeV ADC ADC

  6. Cut Cut on ADC of each hit on a track (Only all (4) hit’s ADC > cut value will be considered as µ from W) ADC precise ADC after digitization 18500 ADC cut :18700 One hit’s ADC distribution pT = 2GeV Kaon µ from W pT > 10GeV ADC

  7. Efficiency of Kaon W efficiency 3 bit (77% pT>20) W efficiency 4 bit (87% pT>20) Kaon’s rejection factor : Precise value : ~ 40 4 bit : ~ 30 3 bit : 20

  8. Real high pT µ from W Real low pT Kaon W ‘s fake high pT background primary_pt<2GeV contribute ~90% of fake high reco_pt background K ‘s contribution is 91% , π is only 9% ; Cut efficiency :dE/dx (fvtx track required) vs primary_pT π+ K+

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