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Low-noise amplifier in 0.12μm standard CMOS technology for K-band

Low-noise amplifier in 0.12μm standard CMOS technology for K-band. ELECTRONICS LETTERS 12th May 2005 Vol. 41 No. 1. Chien-San Wu. Outline. Introduction Amplifier design Measurement results Conclusions References. Introduction.

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Low-noise amplifier in 0.12μm standard CMOS technology for K-band

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  1. Low-noise amplifier in 0.12μm standard CMOS technology for K-band ELECTRONICS LETTERS 12th May 2005 Vol. 41 No. 1 Chien-San Wu

  2. Outline • Introduction • Amplifier design • Measurement results • Conclusions • References

  3. Introduction • For RF circuits operating above 20 GHz, CMOS offers cost-effective and single-chip solutions with potential for radar and high-bandwidth wireless commun- ication applications. • The amplifier achieves a gain of 18.86 dB and a noise figure of 4.26 dB at 20.3 GHz.

  4. Amplifier design The circuit employs three cascaded cascode stages to obtain sufficient gain and stability at the design frequency. To further improve the stability, microstrip transmission lines (TRL) have been used for the source degeneration. A high quality factor of the inductors is essential to obtain the targeted input impedance at high frequencies.

  5. Amplifier design The current consumption is 38 mA from a 1.5 V voltage supply.

  6. Measurement results

  7. Measurement results

  8. Conclusions • A K-band CMOS low-noise amplifier with a noise figure of 4.26 dB and a peak gain of 18.86 dB is presented. The low-noise amplifier has a peak gain frequency of 20.3 GHz and an input referred 1 dB compression point of 16 dBm.

  9. References

  10. Q&A THANKS FOR YOUR ATTENTION ANY QUESTION

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