RCAS, Academia Sinica Shih-Yen Lin ( 林時彥 )

1. Optoelectrical Devices with Nano-Structures RCAS, Academia Sinica Shih-Yen Lin (林時彥)

2. Experiment Systems (Since 2006.10) Device Processing Line P32 MBE (NCU) LandMark Corporation 10-300 K IR Detector Measurement System C21 MBE (NCU) Xpert Corporation Plasma-Assisted MBE (NSYSU) 10-300 K PL/PLE

3. Collaborations Between Different Institutes NTU (臺灣大學) 國科會計畫 Xpert (翔合) 固本精進計畫 CSIST (中科院) 國科會計畫 Project Collaboration (李嗣涔 教授) Project Collaboration Local Wafer Vender (MBE) GaSb QDs (Prof. Bumberg) Crystal Epitaxy and Optoelectronic Device Laboratory (RCAS) TUB, Germany PPP Project Wafer Provider MBE growth (杜立偉 教授) MBE growth (綦振瀛 教授) NSYSU (中山大學) 中研院奈米計畫 RCAS (應科中心) NCU (中央大學)

4. Multi-color Quantum-Dot Infrared Photodetectors

5. InGaAs-Capped Quantum-Dot Infrared Photodetectors Operated at LWIR Range Appl. Phys. Lett., under revision

6. Stark Effect in Asymmetric QD structures Accepted for publication at IEEE PTL.

7. Two-Color Quantum-Dot Infrared Photodetectors Appl. Phys. Lett., under revision

8. Site-Controlled Self-Self Assembled QDs

9. Buffer Layer Growth on Patterned Substrates 100 nm GaAs 50 nm GaAs/GaAsSb 100 nm GaAsSb

10. Fabrication of Nano-Holes on GaAs Substrates AFM Local Oxidation MBE Thermal Desorption Thin Buffer Layer Growth Site-Controlled Self-Assembled QD growth Appl. Phys. Lett. 88, 072107 (2006)

11. Fabrication of Nano-Holes on GaAs Substrates 0.6 mm 0.6 mm After Oxidation After Thermal Desorption

12. Site-Controlled Self-Assembled Quantum Dots Grown on GaAs Substrates Nano-oxides Site-controlled QDs (mm) Site-controlled QDs Dot density 1x107 cm-2 • AFM Local Oxidation • Smooth Surfaces of Thin GaAsSb Buffers • Site-Controlled Self-Assembled QDs with Ultra-Low Dot Density 1x107 cm-2 Submitted to Appl. Phys. Lett.

13. GaSb Quantum Dots/Quantum Rings

14. GaSb QDs grown under Different V/III Ratios V/III=2.0 V/III=1.2 V/III=1.0 V/III=1.6

15. The Evolution of GaSb Quantum Rings with As Supply 100 % Sb 4 sec. As irradiation 8 sec. As irradiation 50 % Sb

16. Future Work

17. GaN-Based Devices By Plasma-Assisted Molecular Beam Epitaxy GaN Rods on Si (111) InGaN film on GaN templates

18. Future Work • Epitaxially Grown Graphene by MBE - Career development award - A new MBE system with max. substrate temperature 1200 oC - Filament C source and N plasma source within a single chamber • Single-QD Devices - Based on current site-controlled QD growth technique - Single-photon generator array - Single-electron transistor array • Long-Wavelength Light Sources and Detectors - A new measurement system up to 100 mm - New device structures for tunable long-wavelength light sources/detectors

19. Publications after 2008 1. Chun-Yuan Huang, Meng-Chyi Wu*,Jeng-Jung Shen, and Shih-Yen Lin, “Self-ordered InGaAs Quantum Dots Grown at Low Growth Rates”, J. Appl. Phys. vol. 103, no. 4, pp. 044301, Feb. 2008 (SCI, IF:, NSC 95-2215-E-007-003.). 2. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Tung-Hsun Chung, Shih-Yen Lin* and Meng-Chyi Wu,” Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 956-958, May/June 2008 (SCI, IF: 1.419, NSC 96-2221-E-001-030). 3. Shu-Ting Chou, Chi-Che Tseng, Cheng-Nan Chen, Wei-Hsiun Lin, Shih-Yen Lin*, and Meng-Chyi Wu, “Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors for Multi-Color Detection”, Appl. Phys. Lett., vol. 92, no. 25, pp. 253510, June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 18, Issue 2 (2008)) (SCI, IF: 3.596, NSC 96-2221-E-001-030). 4. C. L. Tsai, K. Y. Cheng, S. T. Chou, S. Y. Lin, C. Xu and K. C. Hsieh, “Tailoring detection wavelength of InGaAs quantum wire infrared photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 3, pp. 1140-1144, May/June 2008 (The paper is also selected in the Virtual Journal of Nanoscale Science & Technology, Volume 17, Issue 23 (2008)) (SCI, IF: 1.419). 5. Chi-Che Tseng, Shu-Ting Chou, Yi-Hao Chen, Cheng-Nan Chen, Wei-Hsun Lin, Tung-Hsun Chung, Shih-Yen Lin*, Pei-Chin Chiu, Jen-Inn Chyi and Meng-Chyi Wu, “Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors with Smaller Quantum Dots”, IEEE Photonics Technology Lett., vol. 20, no. 14, pp. 1240-1242, July 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030) 6. Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Chi-Che Tseng, Yi-Hao Chen, and Meng-Chyi Wu, “Single-Period InAs/GaAs Quantum-Dot Infrared Photodetectors”, IEEE Photonics Technology Lett., vol. 20, no. 18, pp. 1575-1577, Sep. 2008 (SCI, EI, IF: 2.015, NSC 96-2221-E-001-030). 7. Chi-Che Tseng, Shu-Ting Chou, Shih-Yen Lin*, Cheng-Nan Chen, Wei-Hsun Lin, Yi-Hao Chen, Tung-Hsun Chung, and Meng-Chyi Wu, “The Transition Mechanisms of a ten-Period InAs/GaAs Quantum-Dot Infrared Photodetector”, J. Vacuum Sci. Tech. B, vol. 26, no. 6, pp. 1831-1833, Nov/Dec 2008 (SCI, IF: 1.419, NSC 96-2228-E-002-012). 8. S. T. Chou, S. Y. Lin*, Bonnie Yu, J. J. Shyue, C. C. Tseng, C. N. Chen, M. C. Wu and W. Lin, “The Influence of Interface Roughness on the Normal Incident Absorption of Quantum-Well Infrared Photodetectors”, Thin Solid Films, vol. 517, no. 5, pp. 1799–1802, Jan. 2009 (SCI, IF: 1.693, SBIR project with Grant # 1C950022). 9. Yung-Sheng Wang, Shoou-Jinn Chang, Shu-Ting Chou and Shih-Yen Lin* and Wei Lin, “High Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys. vol. 48, no. 4, pp. 04C108, May 2009 (SCI, IF:, SBIR project with Grant # 1C950022). 10.Shih-Yen Lin*, Shu-Ting Chou, Wei-Hsun Lin, “The Transition Mechanisms of Quantum-Dot/Quantum-Well Mixed-Mode Infrared Photodetectors”, Infrared Physics & Technology, in press (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012).

20. Publications after 2008 11. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range”, IEEE Photonics Technology Lett. accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012). 12. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shih-Yen Lin*, and Meng-Chyi Wu, “Enhancement of Operation Temperature of InAs/GaAs Quantum-Dot Infrared Photodetectors with Hydrogen-Plasma Treatment”, J. Vacuum Sci. Tech. B accepted for publication (SCI, IF:, NSC 96-2221-E-001-030 and NSC 96-2218-E-002-012). 13.Shih-Yen Lin*, Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, and Shu-Cheng Mai, “Voltage-Tunable Two-Color Quantum-Dot Infrared Photodetectors”, Appl. Phys. Lett. under revision (SCI, IF:, NSC 98-2221-E-001-001). 14. Wei-Hsun Lin, Kuang-Ping Chao, Chi-Che Tseng, Shu-Chen Mai, Shih-Yen Lin* and Meng-Chyi Wu, “The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors”, J. Appl. Phys. under revision (SCI, IF:, NSC 98-2221-E-001-001). 15.Shih-Yen Lin*, Chi-Che Tseng, Tung-Hsun Chung, Wen-Hsuan Liao, Shu-Han Chen, and Jen-Inn Chyi, “Site-Controlled Self-Assembled InAs Quantum Dots Grown on GaAs Substrates”, submitted to Appl. Phys. Lett. (SCI, IF:, NSC 98-2221-E-001-001). 16. Chi-Che Tseng, Tung-Hsun Chung, Shu-Cheng Mai, Kuang-Ping Chao, Wei-Hsun Lin, Shih-Yen Lin* and Meng-Chyi Wu, “The transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001). 17. Wei-Hsun Lin, Chi-Che Tseng, Kuang-Ping Chao, Shu-Chen Mai, Shih-Yen Lin*, and Meng-Chyi Wu, “InGaAs-Capped InAs/GaAs Quantum-Dot Infrared Photodetectors with 10.4 m Responses”, submitted to J. Vacuum Sci. Tech. B (SCI, IF:, NSC 98-2221-E-001-001).