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Laser writing on nanoscale-LEDs based on dilute nitrides.

Laser writing on nanoscale-LEDs based on dilute nitrides. Mayank Shekhar Sharma PhD Student “La Sapienza” University of Rome. Personal background history & achievements. 5-Years Integrated M.Sc. in Photonics form CUSAT, India. Projects in nanophotonics, optical tweezing and photovoltaics.

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Laser writing on nanoscale-LEDs based on dilute nitrides.

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  1. Laser writing on nanoscale-LEDs based on dilute nitrides. Mayank Shekhar Sharma PhD Student “La Sapienza” University of Rome.

  2. Personal background history & achievements • 5-Years Integrated M.Sc. in Photonics form CUSAT, India. • Projects in nanophotonics, optical tweezing and photovoltaics. • Internships in University of Hyderabad (India) and University of Duisburg-Essen (Germany) in 2013 and 2014 respectively. • Master thesis in University of Gothenburg (Sweden) in 2015. • Visiting researcher in Chalmers University of Technology (Sweden) for 3 months. • Achievements: • SPIE travel grant for presenting a research work on solar cells in the Annual Meeting of SPIE, San Diego, USA (2014). • DST, INDIA scholarship for working on renewable sources of energy (nano-solar cells), (2013).

  3. Aims & Deliverables • To create site-controlled nanoscale light emitting spots or ordered LED arrays by laser writing using InGaAsN structures. • (InGa)(AsN) p-i-n structures are grown in UMR and hydrogenated in ROME. • Materials development will be targeted to key wavelengths in ICT, i.e. 1.31 μm and 1.55 μm.

  4. Experimental techniques and/or concepts used • Hydrogenation • PL measurements • Analysis • Concepts: • achieve full N passivation by H. • fabrication of site-, size-, and shape-controlled nanostructures emitting at the desired wavelengths.

  5. Background of project • Photonics is important for information and communication technologies (ICT). Eg., fiber optics, internet. • In ICT, photon sources are needed to be operated at 1.31μm and 1.51μm. • Ultimate goal is produce reproducible nano-structuring techniques, and fabrication of nanoscale LEDs using them. • Fabrication of nanoscale-LEDs based on laser-annealing of hydrogen irradiated (InGa)(AsN) will allow us to forward in this field.

  6. Results & Analysis

  7. InAsN vs. GaAsN: H role • Hydrogen has more effect on GaAsN w.r.t. InAsN. InAsN/GaAs QW GaAsN/GaAs QW

  8. What happens for intermediate cases? • InGaAsN: Annealing effects Annealed InGaAsN/GaAs QW Not annealed InGaAsN/GaAs QW

  9. Behavior of hydrogen

  10. Summary • Hydrogenation has finally shown a positive result which has to be undertaken as the first positive step towards passivation of nitrogen with a blue shift. • In-N bonds causes inhibition of hydrogen effects. • The reason might be the strain, cohesive energy, etc. which inhibits hydrogen to passivate nitrogen in indium rich samples.

  11. Skills acquired • Hydrogenation. • Photoluminescence (Spectroscopic measurements). • Optical table setup.

  12. Outputs–publications, talks, posters, outreach • Poster in MBE conference, Montpellier, September 2016.

  13. Future work & aspirations • Complete passivation of nitrogen in InGaAsN using hydrogenation. • To fabricate nanoscale-LEDs based on laser-annealing of hydrogen irradiated (InGa)(AsN). • Materials development will be targeted to key wavelengths, i.e. 1.31 μm and 1.55 μm.

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