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PIDS Summary July 16, 2008 San Francisco, CA

PIDS Summary July 16, 2008 San Francisco, CA. Kwok Ng SRC/USA Rich Liu Macronix/Taiwan C.P. Chang Applied Materials/USA Hidekazu Oda Renesas/Japan Hirofumi Inoue Toshiba/Japan. Japan: Oda, Hidekazu Inoue, Hirofumi Akasaka, Yasushi Eimori, Takahisa Hiramoto, Toshiro Hori, Atsushi

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PIDS Summary July 16, 2008 San Francisco, CA

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  1. PIDS SummaryJuly 16, 2008San Francisco, CA Kwok Ng SRC/USARich Liu Macronix/TaiwanC.P. Chang Applied Materials/USAHidekazu Oda Renesas/Japan Hirofumi Inoue Toshiba/Japan

  2. Japan: Oda, Hidekazu Inoue, Hirofumi Akasaka, Yasushi Eimori, Takahisa Hiramoto, Toshiro Hori, Atsushi Ida, Jiro Imai, Kiyotaka Kasai, Naoki Mifuji, Michihiko Ogura, Mototsugu Sawada, Shizuo Shibahara, Kentaro Sugii, Toshihiro Tadaki, Yoshitaka Tagawa, Yukio Takagi, Shinnichi Tanaka, Tetsu Yoshimi, Makoto Europe: Skotnicki, Thomas DeMeyer, Kristin Jurczak, Malgorzata Lander, Robert Poiroux, Thierry Schruefer, Klaus Taiwan: Liu, Rich Ma, Mike Diaz, Carlos See, Yee-Chaung U.S: Ng, Kwok Brewer, Joe E. Chang, Chorng-Ping Dellin, Theodore A Duane, Michael Hutchby, Jim Maszara, Witek Ning, Tak H. Prall, Kirk Tsai, Wilman Wu, Jeff Yeap, Geoffrey Yu, Scott Zeitzoff, Peter M.

  3. Major Topics • Japan PIDS team provided survey on Lg (physical gate lengths) for HP, LSTP, and LOP logic devices, helping to establish new slowed-down scaling model. • 2008 update will adopt new Lg rules proposed by ORTC. • Discussion of adding ring-oscillator speed as circuit-speed metric, in addition to current form of CV/I.

  4. Summary on Logic • HP and LOP devices using new Lg rules.LSTP devices remain same. • Some “bumps” in first ~3 years, due to merging of 2005 & 2007 tables. • To reflect incorporation of high-K dielectrics and metal gate, plan to re-calculate first ~3 years. • UTB-FD and DG follow delay of Lg rules. • Reconsider series resistance Rsd specs.

  5. Summary on DRAM • Fix inconsistency in 2007 tables between ORTC & PIDS. • PIDS table: • Lg values using 2nd-best figures among 5 companies in DRAM WG survey. • Lg follows 2.5-yr cycle 2007–2009, and 3-yr cycle 2009–2022. • Cell size calculated with HP numbers in table. • ORTC table: • Lg follows 3-yr cycle 2007–2022. • Cell size calculated with rounded HP number.

  6. Summary on Nonvolatile Memory • No change in 2008 update, for both NAND flash & NOR flash scaling. • Now preparing for survey for 2009 ITRS.

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