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Fairchild Solution for PDP application

Fairchild Solution for PDP application. Feb, 2007 Visual System Team High Voltage Functional Power Solutions. Discrete Solution. Component Trend in PDP Market. Y-Board. X(Z)-Board. HVIC. HVIC. Reset. Sustain. Sustain. Clamp. Clamp. Pass Switch. Energy Recovery. Energy Recovery.

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Fairchild Solution for PDP application

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  1. Fairchild Solution for PDP application Feb, 2007 Visual System Team High Voltage Functional Power Solutions

  2. Discrete Solution

  3. Component Trend in PDP Market Y-Board X(Z)-Board HVIC HVIC Reset Sustain Sustain Clamp Clamp Pass Switch Energy Recovery Energy Recovery • AS for main blocks ( Sustain and Energy Recovery ) - “M” com. / “L” com. / “S” com. : IGBT - “F” com. / “O” com. : MOSFET ( IGBT on new concept )

  4. Fairchild IGBT IGBT Products Specific - 300V / 300V Planar - 300V TIGBT - 400V Planar - 450V TIGBT - 600V Planar - 600V NPT IGBT - 900V PT/NPT TIGBT - 900V NPT Field Stop IGBT - 1000V PT/NPT TIGBT - 1200V NPT P/TIGBT - 1200V NPT Field Stop IGBT - 1500 / 1700V SDB Module - 1PAK - 2PAK - Complex SPM - SPM - SPIM - TPIM - CPM Std. Discrete - 600/900/1500VUF Series - 600V RUF B,C-speed - 600V B,C-speed (GEN3) - 300 / 600V SMPS IGBT ( A-speed) - 1200V NPT P/TIGBT FGA series ( NPTA) B,C-speed ( NPT1,MTP ) - 600V NPT IGBT - 600V Field Stop IGBT Major Device Major Device Major Device Major Device • Camera • (400V TIGBT) • IH Jar / Cooker • ( 600/1200V ) • MWO ( 600/1200V) • PDP ( 300 ~ 450V ) • 600V, 1200V • > 2A ~ 160A • 600V, 1200V • > 5A ~ 400A • 600V series • >10A ~ 30A • 1200V series* • > 6A

  5. PDP IGBT Device CY05 CY06 CY08 CY09 CY07 300V 2nd Generation (PT,Trench) 300V 90/120/150/180A (PT,Planar) Proliferation 300V 30 / 70A (PT,Planar) Vce,sat ~ 1.9 V@peak, tf~ <200nsec, 30% shrink from Planar PDP IGBT 300V 30/ 50/ 70/ 90/ 120/ 180 / 240A (PT,Trench) Proliferation Vce,sat ~ 2.0 V@peak, tf~ <200nsec 450V 30/45/60A (PT,Trench) 35% shrink 500 ~ 600V [TBD] (Field Stop, Trench) Proliferation 500 ~ 600V [TBD] (Field Stop, Planar) Proliferation • 450V Trench IGBTs for Japan PDP market • 300V Trench IGBTs for next model in KOREA PDP market • 300V Planar IGBTs for parallel operation in KOREA and Japan PDP market • 600V Field Stop IGBTs for single board concept in KOREA PDP market

  6. Specification for PDP IGBT Products in mass production are on red * Icp condition : @pulse=100us, D=0.2

  7. Vge = 10V Vge = 15V R3xx3 * 3 120N30 * 1 FGPF30N30 R3XX3 30N30 * 3 120N30 * 1 R3xx3 * 3 30N30 * 3 90N30 * 1 90N30 * 1 70N30 * 1 static Latch (“R” maker) 70N30 * 1 30N30 * 1 30N30 * 1 R3xx3 *1 R3xx3 *1 IGBT Competitiveness - 300V/30A PDP IGBT- Qge=5.04 [nC] / Qgc=15.96 [nC] Qg=36.96 [nC] Qge=4.2 [nC] / Qgc=7.72[nC] Qg=24.69[nC]

  8. PDP MOSFET Device CY05 CY06 CY08 CY07 CY09 MOSFET 150/ 200/250/280/300 350/ 500/ 650V (Planar,UniFET) Proliferation 250V42.5mohm (Trench), D2PAK Proliferation 200V27mohm (Trench), D2PAK Proliferation 150 /200/250/300V (SupreMOS, Trench) 150 /200/250/300V (SupreMOS) Proliferation

  9. Specification for PDP MOSFET Products in mass production are on red

  10. MOSFET Competitiveness - 250V PDP MOSFET - Gate Charge S/W turn-on FDB2710 Vds “I” com FDB2710 Vgs Vsd-Id S/W turn-off Vgs FDB2710 “I” com Vds

  11. Stealth UltraFast Schottky Damper HyperFast Fairchild Diode Diode Products 200V Vf : 1.2V Trr : 30 ~ 40ns 300 / 400 / 450V Vf : 1.4V Trr : 45 ~ 50ns 600V Vf : 2.3V Trr : 80 ~ 90ns 1200V Vf :3.5V Trr : 100 ~ 120ns 35V ~ 100V Vf : 0.55 ~ 0.95V 600V Vf : 2.1V Trr : 35 ~ 45ns 1200V Vf :3.2V Trr : 70 ~ 75ns 600V Vf : 2.4V Trr : 22 ~ 45ns 1200V Vf :3.3V Trr : 44 ~ 70ns 1500V Vf : 1.5 ~ 2.4 Tff : 120 ~ 170ns - Single type - Dual common anode type - Dual common cathode type - Dual series type

  12. Device CY05 CY06 CY08 CY08 CY07 Diode 6/ 10/ 12/ 20/ 30/ 40/ 60A 200V (UltraFast) 10/ 20/ 30/ 40/ 60A 300V (UltraFast) 10/20/30/40/60A 300V / 400V / 500V (UltraFast II) Proliferation Proliferation 10 / 20 / 30 / 60A 400V (UltraFast) Proliferation 10/ 20/ 30/ 40A 500V (UltraFast) Proliferation PDP Diode CY09 • 400V UltraFastDiode for KOREA PDP market • 500V UltraFastDiode for Japan PDP market • Cost effective version of UltraFastDiode (UltraFast II )

  13. Specification for PDP Diode Products in mass production are on red

  14. Diode Competitiveness - 300V/10A Ultrafast Rectifier - Fairchild “N” com “S” com • Features • ^ Low Forward Voltage & High Ruggedness • ^ High Speed Switching ( Low Stored Charge, Qrr & Soft Recovery ) “R” com “S-1” com Fairchild

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