技術簡介

1. AZOTransparent conductive films Chien, Shih-Chun (簡士竣) Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, R.O.C. 技術簡介 本研究採用溶膠凝膠法屬於濕式化學製程，可在常壓下進行，無須價格昂貴的真空設備，成功製備AZO透明導電薄膜。本研究之所以選用氧化鋅材料，乃因其資源豐富、價格低廉，且常見的摻雜元素以鋁為最容易取得且性質穩定。隨著摻雜物的不同，氧化鋅可為n型或p型半導體材料，有利於製作具有雙極性(bipolarity)的p-n接面結構。同時具有(002)優選方位的氧化鋅也是壓電(piezoelectricity)材料之一，可用於觸控式面板。由於金屬氧化物材料具良好的導電性、可見光範圍透明度佳及半導體特性，應用極為廣泛。目前常見的透膜導電膜可分為主要有氧化銦(In2O3)、氧化錫(SnO2)和氧化鋅(ZnO)三大系列。 搜尋關鍵字 thin films 搜尋流程 首先前往 美國專利局網站( http://www.uspto.gov ) 點選 (Patents Search ) AppFT: Patent Applications PATFT: Issued Patents () Issued Patents () Patent Applications Quick Search Advanced Search Patent Number Search (1564)App (1277)App (641)App (33991)App (50151)Iss (2076)Iss All Fields Claim(s) Abstract Title (2156)Iss (1069)Iss (Issued Patents) PAT. NO. Inventor Company Filing Day Title Issued Day 6,818,924 Kim; Heungsoo (Fairfax, VA), Horwitz; James S. (Fairfax, VA), Kafafi; Zakya H. (Alexandria, VA), Pique; Alberto (Crofton, MD), Kushto; Gary P. (Crofton, MD) The United States of America as represented by the Secretary of the Navy (Washington, DC) May 16, 2003 November 16, 2004 Pulsed laser deposition of transparent conducting thin films on flexible substrates October 27, 2009 P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates April 17, 2006 Imra America, Inc. (Ann Arbor, MI) Liu; Bing (Ann Arbor, MI), Hu; Zhendong (Ann Arbor, MI), Che; Yong (Ann Arbor, MI), Uehara; Yuzuru (Ann Arbor, MI) 7,608,308 October 6, 2009 November 17, 2005 ZnO film with C-axis orientation Sharp Laboratories of America, Inc. (Camas, WA) 7,597,757 Conley, Jr.; John F. (Camas, WA), Ono; Yoshi (Camas, WA) 首先前往 中華民國專利資訊檢索系統( http://twpat1.tipo.gov.tw) 點選 ( 專利檢索) 輸入關鍵字查詢 查詢結果 列在Word及Excel表格內 發明人 申請案號 申請人 申請日 公告日 名稱 徐進成 臺北縣新莊市中正路510號林春園 臺北市松山區八德路3段81號3樓之1 氧化鋅鋁透明導電薄膜製程及其設備 徐進成 林春園 2009年 05月01日 2007年 10月18日 096139020

2. 搜尋重要結果 096139020- (專利編號) 一種氧化鋅鋁透明導電薄膜製程及其設備,其中真空濺鍍腔體內主要設有離子源濺鍍槍、靶材固定基座、被基座固定之靶材及鍍製品,該鍍製品在真空濺鍍腔體內進行離子束濺鍍,並且可以在室溫高真空度下的條件鍍製,以一支離子源濺鍍槍同時濺鍍一樣或多樣材料。上述設備鍍製AZO薄膜,可以選擇對兩種單一材料靶材同時共鍍、或混合兩種材料之單一靶材鍍製、或單一材料靶材與混合材料靶材共鍍。置放靶材的基座能調整靶材位置,AZO組合的比例就能以共鍍方式調整靶材基座位置,兩靶材同時在不同的轟擊面積下決定混合比例,進一步能分析出實際薄膜成分比例及特性,就能準確有效地調變AZO組合成分,且能在室溫下製鍍出高透光性及導電性佳的成品。 7,597,757- (Issued Patents) A ZnO film with a C-axis preference is provided with a corresponding fabrication method. The method includes: forming a substrate; forming an amorphous Al.sub.2O.sub.3 film overlying the substrate; and, forming a ZnO film overlying the Al.sub.2O.sub.3 film at a substrate temperature of about 170.degree. C., having a C-axis preference responsive to the adjacent Al.sub.2O.sub.3 film. The substrate can be a material such as Silicon (Si) (100), Si (111), Si (110), quartz, glass, plastic, or zirconia. The Al.sub.2O.sub.3 film can be deposited using a chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering process. Typically, the Al.sub.2O.sub.3 layer has a thickness in the range of about 3 to 15 nanometers (nm). The step of forming the ZnO film having a C-axis preference typically means that the ZnO film has a (002) peak at least 5 times greater than the (100) peak, as measured by X-ray diffraction (XRD). 6,818,924- (Issued Patents) The invention relates to the deposition of transparent conducting thin films, such as transparent conducting oxides (TCO) such as tin doped indium oxide (ITO) and aluminum doped zinc oxide (AZO) on flexible substrates by pulsed laser deposition. The coated substrates are used to construct low cost, lightweight, flexible displays based on organic light emitting diodes (OLEDs). 心得與應用 藉由專利佈局這次機會，我深入了解我所研究之領域的相關專利，並發現很多很有創意的應用與很多日常生活中接觸到的相關產品之所需專利與技術。原來我們的研究與生活如此息息相關!且進一步從專利佈局我們可以認識許多這個領域相關之行業及重要的公司，對於將來不管是將研究發表或者是之後出社會找工作皆有極大的幫助，加上專利佈局的認識與專業知識，未來不管是自己的研發成果或者工作後之產品開發專利，都有了初步的認識，對未來打下良好的基礎，也是這門課的最大收穫，由衷的感謝老師給我們這樣的練習機會。 ACKNOWLEDGMENT 曾永寬 老師、王美心 老師。