Supported by NSF-PREM grant DMR-0611562

1. “Seamless” Graphene Interconnects for the prospect of all-carbon spin-polarized field-effect transistorsNicholas G. Kioussis, The University Corporation, Northridge, DMR 0611562Luis Agapito,1 Nicholas Kioussis1, and Efthimios Kaxiras21California State University Northridge, 2Harvard University Graphene (GN) holds a great promise for large-scale integration all-carbon field-effect transistors (FET), where the metallic leads, central dot, and gates are carved from a single graphite sheet. Isolated diamond GN zigzag nano-fragmentrs also exhibit well defined magnetic stateswith distinct electrical conductance which can be tuned through an electric field. We demonstrated, as a proof-of-concept, a nanoscopicspin-polarized field-effect transistor (FET) based on the magnetic, rather than the charge, degrees of freedom of the channel, the latter typically employed in current microscopic GN FETs. The underlying mechanism lies on the unique electronic structure of the magnetic states of the DGN, which can be tuned selectively with gate voltage, through the Stark or hybridization electric-field modulation of the spatial distribution of the spin-polarized molecular orbitals, leading to transition between these states Spin-up (blue) and spin-down (red) transmission function of the a DGN coupled to a reconstructed GN ribbon versus electric field. Thick blue curves denote the field-variation of the spin-up peaks of the HOMO, HOMO-1, LUMO, and LUMO+1, respectively, which have 100% transmission . Supported by NSF-PREM grant DMR-0611562