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Protection scheme for SIS300 dipoles

Protection scheme for SIS300 dipoles. Principle of the quench protection scheme for SIS300. E. Floch. FAIR/MT. 6th Feb 2008. LHC diodes and turn-on voltage (Vto) at 4.2 K. Measurements done at CERN on LHC type diodes show that the average turn-on voltage of a diode at 4.2 K is 5.7 V.

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Protection scheme for SIS300 dipoles

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  1. Protection scheme for SIS300 dipoles Principle of the quench protection scheme for SIS300 E. Floch. FAIR/MT. 6th Feb 2008

  2. LHC diodes and turn-on voltage (Vto) at 4.2 K Measurements done at CERN on LHC type diodes show that the average turn-on voltage of a diode at 4.2 K is 5.7 V. With Vto_average = 5.7 V, we need 5 diodes in series for the short dipole and 9 for the long one. E. Floch. FAIR/MT. 6th Feb 2008

  3. Dynex 8 diode stack - LHC diode were produced by Dynex (england) - GSI bought from Dynex a stack of 8 diodes heat sink clamp plate The heat sink and clamp plate for SIS300 are not the same than those used in Dynex 8 diode stack. E. Floch. FAIR/MT. 6th Feb 2008

  4. SIS300 diode stack for a short dipole We must be able to open the box 3 times to change the diode stack. Here the diode box is closed with bolts but it could be welded with the possibility of cutting it as for LHC magnets E. Floch. FAIR/MT. 6th Feb 2008

  5. SIS300 diode stack for a long dipole E. Floch. FAIR/MT. 6th Feb 2008

  6. Space requirement for the diode stack Another subject related to quench protection is the feed though with the voltage tap connections E. Floch. FAIR/MT. 6th Feb 2008

  7. Related documents - MT-INT-ErF-2008-001 -SIS300D_characteristics.xls - Diode_stack.cdr E. Floch. FAIR/MT. 6th Feb 2008

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