1 / 20

S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous

Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs. S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous. University of Manchester. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs. Outline. What are the SKA requirements?

iria
Download Presentation

S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous University of Manchester Sanae Boulay, Limelette, Nov 05th 2009

  2. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Outline • What are the SKA requirements? • Manchester ‘foundry’ capabilities : work flow • Process technology: key points of InP LNA • LNA fabrication and results • Achievements Sanae Boulay, Limelette, Nov 05th 2009

  3. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs What are the SKA requirements • LNA at frequency range from : 0.3 GHz to 2 GHz (Ultra Wide Band) • Ultra Low Noise: try to reduce NF~ <0.4 dB. • Low Power dissipation ~< 100mW • Low cost : transfer to mass production (>> 1 Million LNAs) • What’s available in the market? Nothing that fit the bill yet! • too expensive, power hungry, MIC (large size), limited frequency band. Sanae Boulay, Limelette, Nov 05th 2009

  4. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs What do we bring to the project? A cost effective solution : 1. Optical lithography = low cost 2. Single chip MMIC! -New type of material based on InP (low leakage current, High VBR ) -Large periphery active device (up to W=1.2mm) -devices easy to match Sanae Boulay, Limelette, Nov 05th 2009

  5. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Outline • Introduction : objective of this work • Manchester foundry capabilities : work flow • Process technology: key points of InP LNA • LNA fabrication and results • Conclusion and future work Sanae Boulay, Limelette, Nov 05th 2009

  6. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Work Flow Individual components Material growth (MM, JS) Design (BB, AS) Fabrication (AB, SB, JS) DC and RF Characterization & Device modelling (BB, AS) Sanae Boulay, Limelette, Nov 05th 2009

  7. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Work Flow Individual components Integration in full LNA process Material growth (MM, JS) LNA circuit design (BB, AS) Design (BB, AS) LNA layout design (AB, SB) Fabrication (AB, SB, JS) LNA fabrication (AB, SB) DC and RF Characterization & Device modelling (BB, AS) LNA characterisation (Selex, MC2, Uni of Man) Sanae Boulay, Limelette, Nov 05th 2009

  8. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Outline • Introduction : objective of this work • Manchester foundry capabilities : work flow • Process technology • LNA fabrication and results • Conclusion and future work Sanae Boulay, Limelette, Nov 05th 2009

  9. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Key point: New type of material Typical 0.15 μm x 40 μm gate InP-based HEMT [1] Typical InGaAs/InAlAs pHEMT experimental gate current curves • First ever demonstrated large periphery InP based pHEMT. • On state gateleakage as low as 0.5μA at a typical low noise bias of 1V, 60 x lower (Bouloukou et al, HETECH, 2007) Sanae Boulay, Limelette, Nov 05th 2009 [1]: R. T. Webster, et al, IEEE Electron Device Letters, vol. 21, 193-5, 2000

  10. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Key point: High break down Voltage 2x75mm Gate periphery Ig(mA) High break down voltage (> 10V up to 20V) and low leakage levels make it possible to use large periphery devices (commonly used for high-power operation) for low noise operation Sanae Boulay, Limelette, Nov 05th 2009

  11. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Key point: reduction in Rn and NF • Larger geometries lead to lower Rn , • Low Rn allows for a closer match between NF and NFmin • Closer match enables less complex low noise amplifier (LNA) designs • less integrated passives • less added noise sources • Low NFmin and low Rn are key for low frequency LNA designs • Large periphery devices essential Sanae Boulay, Limelette, Nov 05th 2009

  12. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Outline • Introduction : objective of this work • Manchester foundry capabilities : work flow • Process technology: key points of InP LNA • LNA fabrication and results • Conclusion and future work Sanae Boulay, Limelette, Nov 05th 2009

  13. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs LNA design study 1st Generation LNA done, tested on 2’’ wafers. Packaging studies in parallel With RFMOD. 2nd Generation LNA Dimensions: X = 1.48 mm Y = 1.24 mm D3 D2 Sanae Boulay, Limelette, Nov 05th 2009

  14. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs LNA Process Fabrication Inductors Capacitors pHEMTs Resistors 10 steps process: -pHEMTs, Lg=1mm, W= 800μm -MIM passives -NiCr resistors All CPW technology! Sanae Boulay, Limelette, Nov 05th 2009

  15. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs LNA Measurements SELEX Single-stage circuit; Full MMIC measurements Measurement results (SELEX) Error in the layout design (short in all the double satge LNAs) And ground plane not well defined in first run  addressed in newer runs Unfortunately: Sanae Boulay, Limelette, Nov 05th 2009

  16. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs S Parameters of a single stage LNA, SELEX VDD = 3V ; Id = 15 mA  Pdiss = 45 mW Sanae Boulay, Limelette, Nov 05th 2009

  17. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs S Parameter of a single stage LNA, SELEX VDD = 3V ; Id = 15 mA  Pdiss = 45 mW Sanae Boulay, Limelette, Nov 05th 2009

  18. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Noise measurements of a single stage LNA, MC2 At 25 mA drain current, VDD=3V => Pdiss=75mW! Best data at 25mA NF ~ 1.5dB to 2dB from 1 to 2.5 GHz Sanae Boulay, Limelette, Nov 05th 2009

  19. Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Achievements and future work Future work • Optimization of the 2nd generation LNA design based on measurements … • Transfer the process on 2’’ wafer: homogeneity, and reliability of the process. • Effect of packaging. • 3rd Generation LNA (with new pHEMTs structures, High Gm) • New fabrication method for very low cost sub-micron (0.5 mm) technology. Achievements • Full active and passive device libraries. • Demonstrated quality requirements: • reliability, reproducibility of the fabrication process. • Encouraging results with NF~1.5 to 2dB single stage LNA from 1GHz to 2GHz and Pdiss~75mW. Sanae Boulay, Limelette, Nov 05th 2009

  20. Thank you for your attention Any Questions? Sanae Boulay, Limelette, Nov 05th 2009

More Related