1 / 1

Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET)

Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET). Objective: Rappture tool development - drift diffusion simulator for relatively large-sized multigate FET. Understand drift diffusion transport and its application/limitation Approach:

jean
Download Presentation

Drift Diffusion Simulator Tool Development for MultiGate Field Effect Transistors (MuGFET)

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Drift Diffusion Simulator Tool Development forMultiGate Field Effect Transistors (MuGFET) • Objective: • Rappture tool development - drift diffusion simulator for relatively large-sized multigate FET. • Understand drift diffusion transport and its application/limitation • Approach: • Utilize available drift diffusion simulator (PROPHET and PADRE) • User-friendly input interface implementation via Rappture • Energy balance equation for velocity overshoot in small device • Impact: • Powerful tool for semiconductor engineers: useful analysis options • Significantly reduced simulation time compared to quantum transport simulator Vg (V) Id (A/μm) • Result: • Quantative agreement of simulation result with experiment • Significant effects of the velocity overshoot on the on-current , subthreshold slope and transconductance. • Effects of Gaussian doping profile on on-current and DIBL/SS : trade-off (characteristic length ↑ : Ion↑ DIBL↓ SS ↑)

More Related