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DC & RF Magnetron Sputter

DC & RF Magnetron Sputter . Pei-Ju Chen * Chien-Neng Liao. Introduction. Thin film deposition . Physical vapor deposition (PVD). Chemical vapor deposition (CVD). Sputter Evaporation E-gun. MOCVD LPCVD APCVD. ＋. ＋. ＋. ＋. ＋. ＋. ＋. ＋. ＋. ＋. Plasma-1.

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DC & RF Magnetron Sputter

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  1. DC & RF Magnetron Sputter Pei-Ju Chen* Chien-NengLiao

  2. Introduction Thin film deposition Physical vapor deposition (PVD) Chemical vapor deposition (CVD) • Sputter • Evaporation • E-gun • MOCVD • LPCVD • APCVD

  3. ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ Plasma-1 • 將腔體抽到真空度10-6torr，加入氬氣氣體，施加高電壓，就會形成電漿狀態。 • 電漿中帶正電的離子將被加速射向陰極，撞擊靶材後，濺出靶材原子飛向基板。 Anode Energy e- e- e- e- e- e- e- e- High V e- Cathode e- molecule ion electron

  4. Plasma-2 Ionization : e- + A → A+ + 2 e- Dissociation:e- + AB → e- + A+B Relaxation:A*→A + hν(photons) Excitation:e- + A → A* + e-

  5. ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ DC sputter • DC濺鍍是最早發展的濺鍍方法。 • 因為DC濺鍍使用靶材當成陰極，所以靶材必需是金屬物質，無法濺鍍氧化物等介電材料。 Anode Anode e- e- e- e- e- e- e- e- e- e- e- e- e- e- Cathode Cathode Non metal Metal

  6. ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ RF sputter • 1955年，Wehner發明了交換式電流，以13.56MHz的頻率，不斷的更換電流的正負極電壓。電荷不會累積在靶材附近。因此就沒有屏障需要衝破，也就不需要高電壓，可以在較低電壓的狀況下，持續的工作。 Anode Cathode e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- e- Cathode Anode e- molecule ion electron

  7. ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ ＋ Magnetron sputter-1 • 電子因為磁力線的影響，而螺旋性的前進。這樣可以大幅的增加氬氣氣體的離子密度以及碰撞機率。離子密度將會從1010ion/cm3增加到1013ion/cm3。因此，鍍率可以大幅度的提高。 Anode Anode e- e- e- e- e- e- e- e- e- e- e- Cathode Cathode e- molecule ion electron Magnetic field

  8. Magnetron sputter-2 • 不過磁控濺鍍不能應用在導磁性的靶材材料中，磁場不均勻會造成靶材曲面性的消耗(中間消耗多，周圍消耗少，成凹陷狀)，凹陷狀的靶材將造成靶材消耗不均勻。這對膜層的均勻性傷害很大。 http://www.helmholtz-berlin.de/forschung/enma/solare-brennstoffe/analytische-methoden/reaktives-magnetron-sputtern_en.html

  9. Summary

  10. Gantt chart

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