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InGrid fabrication at LAAS

D. Attié, P. Colas, M. Chefdeville. InGrid fabrication at LAAS. We visited LAAS (CNRS lab in Toulouse, France, specialized in micro-electronics , opto - electronics , micro- and nano- systems ) in April.

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InGrid fabrication at LAAS

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  1. D. Attié, P. Colas, M. Chefdeville InGrid fabrication at LAAS Wevisited LAAS (CNRS lab in Toulouse, France, specialized in micro-electronics, opto-electronics, micro- and nano-systems) in April. LAAS : 1500 m² of clean roomsfrom class 10000 to 100. 20 M€ equipement for development of hightechnologyprocesses : mask fabrication, submicrontolerances, 3D structures, photo- and electro-lithography, MEMs, thin film deposition, electrochemistry, plasma etching, ion implantation, etc… RTB network : allows to submit a project, even a ‘small’ one, and carry it out with the help of specialists, atoperationcost (no participation to the investment) TEAM: a veryexperienced team of engineerswhocanadvise and support the projects and grantaccess to the adaptedtechniques in micro-electronics.

  2. Most machines limited to 6 ’’. • Goal : protection layers and InGrid fabrication on top of individual TimePix chips or wafers • In collaboration with Twente-MESA+ and others • Improvements foreseen with respect to ‘state-of-the-art’ : • More (or full) automatisation of the processes • Lift-off process for making the grid holes • New ideas to avoid polymerization of the SU8 while deposing the grid material • Possibility of thicker grids, recharged in metal and/or resistive material LAAS

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