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Elastic scattering p + Si: can be a source of background?

Elastic scattering p + Si: can be a source of background?. The overall level of background due to interaction of p /K with Si-atoms has to be studied with MonteCarlo All the kind of interactions will be included However some information can be extracted using basic principles.

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Elastic scattering p + Si: can be a source of background?

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  1. Elasticscatteringp + Si: can be a source of background? • The overalllevelof background due tointeractionofp/K withSi-atomshastobestudiedwithMonteCarlo • All the kindofinteractionswillbeincluded • However some information can beextractedusingbasicprinciples F. Marchetto INFN - Torino

  2. I triedtoexamine the elasticscatteringwhichis the mostcopious ( about 50 mb) among the single interactiontypes. • The elasticinteractionprobabilityisaround 10-4 , while the total interactionprobabilitywillbeoneorderofmagnitudelarger. q Si 1.25 mrad < q < 15 mrad: toenterinto the Strawchambers

  3. Theseanglescorrespondto a kineticenergyof: 200 keV and 22 MeV, whichtranslateinto a rangeofSiliconnucleusoflessthan 1 micron and 6 micron, respectively. Numberofequivalentmipsassumingthatall the energy loss goesintoionization From 3 mrad up, oneshouldbeabletoreject the elasticscattering on the basisof the energyreleased in the detector. But… thatisnottrueif the interactionhappens in the ASIC chip or micro-channelcoolingsupport. The nucleuswillremain, with a high probability, in the blind structureitselfand thereis no way to spot it. Forthisparticular background source, oneshouldreduce the chip thickness.

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