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Proposed Ultra Wideband for Implant Wireless Body Area Network

Iji Ayobami B . MQ41955447. Proposed Ultra Wideband for Implant Wireless Body Area Network. Supervised by . Michael Heimlich & Tony Parker. 1. Contents. Introduction Proposed Ultra Wideband for Implantable Wireless Body Area Network UWB design focus and constraints

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Proposed Ultra Wideband for Implant Wireless Body Area Network

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  1. Iji Ayobami B. MQ41955447 Proposed Ultra Wideband for Implant Wireless Body Area Network Supervised by Michael Heimlich & Tony Parker 1

  2. Contents • Introduction • Proposed Ultra Wideband for Implantable Wireless Body Area Network • UWB design focus and constraints • Implantable WBAN Requirements for GHz Radio • UWB Systems • CMOS process • Design Method • Conclusion 2

  3. Introduction • The purpose of this thesis is to design Ultra Wideband (UWB) Impulse Radio (UWB-IR) transceiver, consisting of a non-coherent receiver and a carrier less transmitter. • The major interest is to optimize and design UWB-IR transceiver with low power, low noise and adaptive circuits capable of transmitting image inside the human body. 3

  4. Proposed Ultra Wideband for Implant Wireless Body Area Network Aim: • Implantable WBANs : health monitoring and treatment • To carry out measurements which include telemetry and video streaming • UWB is investigated as a candidate for the Implantable WBANs 4

  5. UWB design focus and constraints • Target: • Better Multipath • Low Power • Low cost • Radiation hard • Wireless sensor • Non coherent • Low complexity • Adaptive circuit • Very smart circuit • Very fast (Pico Second) • UWB Technology (3.1 - 10.6) GHz Proposed UWB Radio size Transparent 12.8mm 6mm 5

  6. Implantable WBAN Requirements for GHz Radio (UWB IEEE 802.15.6 Proposal PHY) • UWB technology (3.1 - 10.6) GHz • EIRP = -41.3 dBm/MHz • Data rate = up to 10Mbps • Distance = 2cm or more • Battery life = 10 years maybe • Modulation: BPSK, QPSK • Antenna type: Magnetic e.g. loop antenna 6

  7. UWB Systems • Types of radio: • IR – UWB (Impulse response) • MC – UWB (Multicarrier) • IR UWB • Less complex hardware implementation • Less demanding digital processing • Greater resilience to multipath fading 7

  8. CMOS Process • Silicon on sapphire (Al2O3) 0.25micon CMOS process (sapphicon lib.) • Insulating substrate • Better isolation between circuit elements • Less advance manufacture process (better performance) • 0.25um SOS technology is similar to 0.13um in bulk silicon (two generations ahead). 8

  9. Design Method 1. • Definition of Implantable UWB system requirements • Design of a Non-Coherent UWB Transceiver system • Transistor modelling/Verification of Sapphicon Library 9

  10. Design Method 2. System & Peripherals Digital Baseband Antenna Analogue Baseband Radio Frequency Modulation& Demodulation Core memory Human interface Power Battery Analogue Baseband (Pulse det. Pulse gen. AD) Digital Baseband (encoding Decoding) Front end (LNA, PA, Filters etc.) Fig. 1. UWB Transceiver Architecture 10

  11. Design Method 3. Fig. 2. Transceiver Architecture 11

  12. Design Method 4. • Design of a Transceiver using CMOS transistor This include sub-circuit design • Low Noise Amplifier • Buffer Amplifier • Pulse Generator • Pulse shaping filters • Power Amplifier • Mixers (Passive and Active) 12

  13. Conclusion • We are able to establish the technology to use • System requirement has been established • System design • We have commence RF front end design 13

  14. Thank you Questions & Answer 14

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