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Experiments to probe the inverse Spin-Hall Effect in GaAs

DFG Meeting „Halbleiter-Spintronik“. Experiments to probe the inverse Spin-Hall Effect in GaAs U. Pfeuffer, R. Neumann, D. Schuh, W. Wegscheider, D. Weiss 7. June 2008. University of Regensburg. DFG Meeting University of Regensburg.

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Experiments to probe the inverse Spin-Hall Effect in GaAs

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  1. DFG Meeting „Halbleiter-Spintronik“ Experiments to probe the inverse Spin-Hall Effect in GaAs U. Pfeuffer, R. Neumann, D. Schuh, W. Wegscheider, D. Weiss 7. June 2008 University of Regensburg

  2. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs CONTENT Motivation Spin-Hall Structure Sample Preparation Measurements Conclusion

  3. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MOTIVATION Spin-Hall Effect Electric field induces transverse spin-current due to spin-orbit scattering. Inverser Spin-Hall Effect Spincurrent induces a transverse charge-current.

  4. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MOTIVATION Spin-Hall-Structure z FM y x I I V≠0 FM LSH

  5. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MOTIVATION Valenzuela & Trinkham Electrical measurements in diffusive metallic conductor. Spincurrent injected out of ferromagnetic CoFe through Al2O3 tunneling barrier in Al Hall-Bar. Spin detection without magnetic materials. Spincurrent induces due to spin-orbit scattering a transversve Spin-Hall imbalance → USH External B-field defines direction of spins AFM image, S.O. Valenzuela et al., Nature Lett. 442, 13 (2006)

  6. DFG Meeting University of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MOTIVATION Valenzuela & Trinkham

  7. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs SAMPLE PREPARATION • Material • 3.2 Preparation • Zn pads annealing @ 500°C • Hall-Bar (acetic acid) • Au contacts • EBL • Fe sputtering + Au (80nm + 100nm) Wafer D070313B (grown by D. Schuh, Workgroup W. Wegscheider, University of Regensburg)

  8. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 1 „bad sample“

  9. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 1 „bad sample“

  10. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 1 „bad sample“

  11. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 1 „bad sample“ Change of polarization of injected current ? J. Moser et al. Appl. Phys. Lett. 89, 162106 (2006)

  12. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Reproducibility

  13. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 2 „good sample“

  14. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 2 „good sample“

  15. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs MEASUREMENTS Sample 2 „good sample“

  16. DFG MeetingUniversity of Regensburg 06/07/08Experiments to probe the inverse Spin-Hall Effect in GaAs CONCLUSION & OUTLOOK Measured signal looks like inverse „Spin-Hall- Effect“ on GaAs Further tests Non-ferromagnetic injector Structure with different distances from injector

  17. DFG Meeting „Halbleiter-Spintronik“ Thank You For Your Attention "The most exciting aspect of this finding is that you don't know exactly where it's going to lead“ D.D.Awschalom University of Regensburg

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