AIDA WP8.4 Qualification of components (Electronics)

1. AIDA WP8.4 Qualification of components (Electronics) Mauro Citterio on behalf of INFN Milano Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

2. INDEX • Literature/Standard Survey …. Some results • Irradiation requirements • Peculiarity of High Energy Physics (HEP) environment • Test case presented: Electronics for the ATLAS Calorimeter • Test plan …. In the following months • Some on-going measurements • In collaboration with LHC experiments • In collaboration with other INFN programs • Power MOSFETs under irradiation • exposed to ionizing radiation (gamma 60Co) • exposed to heavy ions (75Br at 155 MeV) and protons (216 MeV) • Conclusions Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

3. Literature/Standard Survey • Existing data on “rad-tolerant” electronics componentsfrom LHC show a “non–uniform” set of results • Very different “environment” where components needs to operate • Literature dominated by “non-HEP” Standard • Sources: IEEE NSREC Data Workshop and Proceedings, RADECS Data Workshop and Proceedings, ESA Contract Reports, ESA Radiation Design Handbook. PSS 609, IEEE Publications • Total Ionizing Dose Standards: SCC 22900 (ESA SCC), Mil Std 883E Method 1019.6 (DESC), ASTM F1892 (includes ELDRS) • Single Event Standards: SCC 29500 (ESA SCC), EIA/JEDEC Standard EIA/JESD57, ASTM F1192 • However some guidelines can be extracted, at least to compare with similar studies already made Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

4. Useful inputs from survey Dose-rates for testing. - High Dose Rate: SCC 22900 Window 1. 1-10 rads/sec. MIL883E 1019.6. 50-300 rads/sec. - Low Dose Rate: SCC 22900 Window 2. 0.01-0.1 rads/sec. MIL883E 1019.6. 0.01 rads/sec. Elevated Temp. 0.5-5 rads/sec. Typical condition Test conditions Not Common in our field, Should be considered …. It could be the “real worst case” Sample Size/Traceability Sample Size: Total Ionizing Dose. Minimum 5 samples. 4 test, 1 reference. Single Event. 3 samples recommended. Traceability Use single Lot Date Code for test to avoid “Safety Factors” It is easy to do, but it is rarely done Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

5. Test conditions Limited Comparison Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

6. Component database: must contain “proper” information on the testing procedure • Predict radiation spectra/doses for the experimental “region” where tested components will operate, before doing the test. Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

7. Case Study: ATLAS Liquid Argon Electronics: The major background is due to neutrons and gammas. On the right is a simulated spectrum of particles. How the space environment looks like (at least for neutron)? Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

8. Case Study for neutron: Courtesy of HelioTakai (BNL) Space environment is similar at least for the neutron spectra up to 100 MeV (after a scale factor ). • We need to find irradiation facilities with similar spectra. Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

9. Case Study for neutron: IEEE paper, Author: Charles Slayman Some facilities exist and data are available from literature • They are the best choice to irradiate components • AIDA facilities should be “included” in a similar plot • This test case should be repeated for various environment !!! … on going activity Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

10. Case Study for proton: Courtesy of HelioTakai (BNL) Moreover the energy of the beam has an effect on the degradation • We need not only to have a metric to compare against but we need also to “evaluate” rad tolerance of new technology • More “HEP typical” test cases are under study Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

11. Beam line Device under test Test Plan • The research program will be focused on the characterization against radiation (ionizing and not) of electronics components and circuits • commonly used in high energy physics experiments. • Some class of devices to be tested are • ADCs, MUX, Clock generator, PLLs, • Field Programmable Gate Arrays (FPGA), • Power Mosfets, GaNMosfets • DC-DC converter and Point of Loads (POLs) • The devices to be tested will be both commercial and custom made devices. • The latest are mostly component developed by CERN or CERN's collaborator in various technologies, such as silicon CMOS (130 and 65 nm), Silicon Germanium (SiGe 250 and 130 nm) and Silicon on Saffire (250 and 180 nm). Beam line Device under test Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

12. Test Plan • Displacement damage tests will be performed with both proton an neutron beams: • TSL facilities (Uppsala) PAULA and ANITA are the current baseline • UCL at Louvain-la-Neuve, LIF beam line is under consideration • Test will be performed on packaged and bare die devices (if available) • Max beam energy at extraction is relevant for commercial devices • INFN Milano will be willing to share beam time with other member of the collaboration for testing other type of devices. • List of the parameter to be tested is very long and need to be shortened, optimized and documented • Digital and analogue electronics have different set of parameters to be monitored Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

13. On going measurements Courtesy of Huchen Cheng (BNL) INFN Milano is participating to test on going in the ATLAS collaboration • Various ADCs are tested for TID and DD. • The data will be inserted in the AIDA Database • Still very difficult to get a “standard” report of the tests. Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

14. On going measurements Power Mosfets exposed to gamma rays (INFN APOLLO experiment) Devices under test: 30V STP80NF03L-04 30V LR7843 200V IRF630 For each type of device 20 samples were tested, 5 for each dose value (tested at the ENEA Calliope Test Facility) Useddoses: I 1600 Gray II 3200 Gray III 5890 Gray IV 9600 Gray Measurements : BreakdownVoltage @ VGS=-10V Threshold Voltage @ VDS=5V ON Characteristic @ VGS=10V GateLeakage @ VDS=10V Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

15. On going measurements 200 V Mosfet: IRF630 (courtesy of APOLLO Experiment) Large parameters variation from device to device.  How to document these results in a database? Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

16. Power mosfet exposed to protons The results are still preliminary. Only the 200V Mosfets (IRF 630, samples from two different manufacturers) were exposed. Test done by measuring SEBs. Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston) Ionizing Dose: < 30 Krads An “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown. Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

17. Power Mosfets … • The number of SEB events recorded at each VDS was small  less then 30 events for the ST  less than 150 events for the IR devices  Large statistical errors affect the measurements • The cross section at VDS = 150 V (“de-rated” operating voltage) can not be properly estimated • Dependence from manufacturer • “Knee” not well defined • To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2, which puts the failure rate at <1 for 10 years of operation • Proton irradiation campaigns with increased fluences and more samples are planned. Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4

18. Conclusion • The survey of the existing data has given some input for the information that have to be gathered for the DATABASE • The irradiation facilities need to be chosen accordingly to the radiation spectra expected in the HEP experiments • Test on “typical” devices of interest in future HEP experiments (both in collaboration with other Institution and directly by INFN) are ongoing. • More and more results will be available in the coming months • The database will in any case a limited number of components • It is reasonable to imagine that the database will grow even after AIDA lifetime. Mauro Citterio - AIDA 2nd Annual Meeting: WP8.4