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Examples

Examples. Diffusion with oxidation. Boron predeposition at 1000 o C for 20 minutes Drive in a dry oxidizing environment for 2 hours at 1000 o C Background carrier concentration is 1E14 cm -3. Surface of wafer. After Photolith and Etching. Diffusion. Boron implant with Q = 9.22x10 14 cm -2

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Examples

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  1. Examples

  2. Diffusion with oxidation • Boron predeposition at 1000oC for 20 minutes • Drive in a dry oxidizing environment for 2 hours at 1000oC • Background carrier concentration is 1E14 cm-3

  3. Surface of wafer

  4. After Photolith and Etching

  5. Diffusion

  6. Boron implant with Q = 9.22x1014 cm-2 • Implant energy = 30keV • Drive in a dry oxidizing environment for 2 hours at 1000oC • Background carrier concentration is 1E14 cm-3

  7. After Drive

  8. After Implant and Drive

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