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1. A Si-Based Amorphous Thin Film Resistance Memory I-Wei Chen, University of Pennsylvania, DMR 1104530 (a) (b) • Mobile devices need simple memory that requires no power during storage. Resistance memory (b) meets this requirement but its properties vary over a large standard deviation ∆ relative to the mean μ, and its property statistics follows a distribution, F(x)=1-exp(-(x/xo)k), with a small k. The four properties ((1)-(4) in (a)) of our device (c) based on a promising nano material concept have achieved the smallest ever ∆/μ and the largest ever k. V Pt SiO2 : f Pt (3) Mo (1) (4) SiO2/Si (2) (c) RHRS (DC) RHRS (AC) Voff -Von (a) Statistics of device properties. (1)-(4) from our device, others from the literature. (b) Zero-voltage resistance (memory) stored in different values depending on prior voltage history. (c) Schematic device. U.S Patent 7,666,526 B2 (2010)

2. A Si-Based Amorphous Thin Film Resistance Memory I-Wei Chen, University of Pennsylvania, DMR 1104530 Workforce development such as nurturing young talents to renew the US industry is one contribution that university makes to the society. Dr. ByungJoonChoi joined HP Labs in Palo Alto in July 2011 after spending two years at Penn developing a new Si-based resistance memory. At HP, he will continue this research to fabricate a prototype memory with a nanometer feature size. Dr. ByungJoonChoi (right) with his wife and son at Phillies’ home, Citizen Bank Park of Philadelphia, before leaving in July 2011.