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MOS Field-Effect Transistors (MOSFETs)

MOS Field-Effect Transistors (MOSFETs). 1. Figure 4.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross-section. Typically L = 0.1 to 3 m m, W = 0.2 to 100 m m, and the thickness of the oxide layer (t ox ) is in the range of 2 to 50 nm.

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