'Drain current' presentation slideshows

MOS Field-Effect Transistors (MOSFETs)

MOS Field-Effect Transistors (MOSFETs). 1. MOSFET ( Voltage Controlled Current Device). MOS Metal Oxide Semiconductor Physical Structure FET Field Effect Transistor

2.1k views • 160 slides

FIELD EFFECT TRANSISTOR

Bahan Kuliah Elektronika Dasar Pertemuan ke 11. FIELD EFFECT TRANSISTOR. oleh Ir.Bambang Sutopo,M.Phil Jurusan Teknik Elektro FT-UGM 2007. DIODA freewheel. DRIVER RELAY ( diskusi tugas lalu). RELAY. V CC. I B-JENUH = arus basis yang membuat transistor dalam kondisi jenuh. R B.

1.19k views • 84 slides

FET (Field effect transistor)

FET (Field effect transistor). Two main groups JFET (junction FET) MOSFET (metal-oxide-semiconductor FET) Advantage extremely large input impedance Disadvantages Smaller gain (g m ) than bipolar transistor More difficult to analyze. Drain. I. Gate. Source. JFET. n-channel JFET

1.39k views • 57 slides

CHAPTER 6 Field Effect Transistors (FETs)

CHAPTER 6 Field Effect Transistors (FETs). Acknowledged to: Shahrul Ashikin Azmi (PPKSE). Objectives. Explain the operation and characteristics of junction field effect transistors (JFET). Understand JFET parameters. Discuss and analyze how JFETs are biased.

818 views • 51 slides

Carbon Nanotube Field-Effect Transistors: An Evaluation

Carbon Nanotube Field-Effect Transistors: An Evaluation. D.L. Pulfrey, L.C. Castro, D.L. John. Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada pulfrey@ece.ubc.ca. S.Iijima, Nature 354 (1991) 56.

620 views • 47 slides

Chapter 4. Field effect transistor

Chapter 4. Field effect transistor. Introduction. Organic FETs are technologically interesting because they could serve as the main component in cheap and flexible electronic circuits. Major possible applications are radio frequency identification (RF-ID) tags and flexible displays.

883 views • 42 slides

Fundamentals of Microelectronics

Fundamentals of Microelectronics. CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box.

927 views • 40 slides

Low Frequency Noise in GaN-Based Advanced Electronic Devices

Low Frequency Noise in GaN-Based Advanced Electronic Devices. A Dissertation for Doctor of Philosophy By Nezih Pala Thesis Advisors: Dr. Michael Shur Dr. Remis Gaska. Talk outline. Motivation Introduction to low frequency noise Devices under study Possible noise sources in FETs

609 views • 36 slides

Monolithic CMOS Detectors for Tracking and the Sticky Photo-Gate

Monolithic CMOS Detectors for Tracking and the Sticky Photo-Gate. Wieman RNC LBNL 9-Feb-2005. Things to cover. Brief report on the STAR Heavy Flavor Tracker program, an inner vertex detector to use monolithic CMOS pixel detectors

500 views • 34 slides

EE 5340 Semiconductor Device Theory Lecture 28 - Fall 2009

EE 5340 Semiconductor Device Theory Lecture 28 - Fall 2009. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. Implanted n-channel enhance-ment MOSFET (ohmic region). 0< V T < V G. e- channel ele + implant ion. Channel. V S = 0. 0< V D < V DS,sat. E Ox,x > 0. n+. n+.

485 views • 32 slides

V. Re a,c , L. Gaioni b,c , M. Manghisoni a,c , L. Ratti b,c , V. Speziali b,c , G. Traversi a,c

433 views • 31 slides

L. Ratti a,c , M. Manghisoni b,c , V. Re b,c , V. Speziali a,c , G. Traversi b,c

427 views • 28 slides

Semiconductor Devices III

Semiconductor Devices III. Physics 355. Transistors in CPUs.

640 views • 27 slides

ECE 340 ELECTRONICS I

ECE 340 ELECTRONICS I. MOS APPLICATIONS AND BIASING. MOSFET REGIONS OF OPERATION. CUT OFF LINEAR, OHMIC, TRIODE SATURATION. CUT OFF REGION OF OPERATION. LINEAR, OHMIC, TRIODE REGION OF OPERATION. SATURATION REGION OF OPERATION. MOSFET CHARACTERISTICS. 1.5mA. I D. 1.0mA. v GS3.

422 views • 26 slides

Black Box Modeling of LDMOSFET

Black Box Modeling of LDMOSFET. H. Taher, D. Schreurs and B. Nauwelaers. TELEMIC Devices & Circuits Group. Contents. Introduction Capacitive effects on terminal currents Constructing the model Validation of the model Conclusions. Introduction.

298 views • 19 slides

MOSFET Metal Oxide Semiconductor Field Effect Transistor

MOSFET Metal Oxide Semiconductor Field Effect Transistor. Introduction. It is a type of transistor Another name for the MOSFET is the insulated-gate FET or IGFET. This name emphasizes the fact that the gate electrode is electrically insulated from the device body (by the oxide layer).

580 views • 17 slides

Operation Transistor

249 views • 14 slides

Philippe Adell 1 , Hugh Barnaby 2 , Ron Schrimpf 3 and Bert Vermeire 2 1 Jet Propulsion Laboratory

Band-To-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices. Philippe Adell 1 , Hugh Barnaby 2 , Ron Schrimpf 3 and Bert Vermeire 2 1 Jet Propulsion Laboratory 2 Arizona State University 3 Vanderbilt University. Motivation.

363 views • 12 slides

H. Tsuchiya A. Svizhenko M. P. Anantram M. Ogawa T. Miyoshi

321 views • 11 slides

The 2 th International Conference on Advanced Electromaterials (ICAE 2013)

The 2 th International Conference on Advanced Electromaterials (ICAE 2013).

144 views • 1 slides