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Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Depletion-Mode MOSFETS. NMOS transistors with Ion implantation process used to form a built-in n -type channel in device to connect source and drain by a resistive channel

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Drain regions - PowerPoint PPT Presentation

Chapter 4 Field-Effect Transistors