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Chapter 5 Bipolar Junction Transistors

Chapter 5 Bipolar Junction Transistors. Chapter Goals. Explore the physical structure of bipolar transistor Study terminal characteristics of BJT. Explore differences between npn and pnp transistors. Develop the Transport Model for bipolar devices.

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1.35k views • 43 slides

Special Purpose Diodes

Special Purpose Diodes. ET 212 Electronics . E lectrical and T elecommunication Engineering Technology Professor Jang. Acknowledgement.

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1.48k views • 33 slides

306

I (V= -600V) < 1x10 -5 A 1x10 -5 A < I (V= -600V) < 1x10 -4 A I (V= -600V) > 1x10 -4 A. 306. Yield at V = -600 V I < 10 -5 A ? 16 % I < 10 -4 A ? 43 %. I-V forward characteristics. I-V reverse characteristics. I (V= -600V) < 1x10 -5 A 1x10 -5 A < I (V= -600V) < 1x10 -4 A

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407 views • 22 slides

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Forward characteristics - PowerPoint PPT Presentation

Chapter 5 Bipolar Junction Transistors

Special Purpose Diodes

306