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Deep levels roles in non-equilibrium conductivity in irradiated Si

Deep levels roles in non-equilibrium conductivity in irradiated Si. J. Vaitkus, A. Mekys, G. Mockevi ?ius, J. Storasta, N. Vainorius Institute of Applied Research & Department of Semiconductor Physics, Vilnius University. Outline:. Introduction: the purpose of the work:

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286 views • 28 slides

??? 2011.Dec.04

??? 2011.Dec.04. Experiment. Hall-bar geometry was fabricated using oxygen plasma. Electrodes were made of Ti/Pd/Au . Gate length 2 to 4 ? m, Hall-bar width from 0.5 to 4 ? m.

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211 views • 11 slides

Measurement of Hall voltage and resistivity

Measurement of Hall voltage and resistivity. Measurement of Resistivity. Measurement of Hall voltage. where. t = thickness of the sample. Variation of F with Q. F(Q) = 1, if R A = R B.

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368 views • 5 slides

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Hall mobility - PowerPoint PPT Presentation

Deep levels roles in non-equilibrium conductivity in irradiated Si

??? 2011.Dec.04

Measurement of Hall voltage and resistivity