'High level injection' presentation slideshows

Semiconductor Device Modeling and Characterization EE5342, Lecture 7-Spring 2004

Semiconductor Device Modeling and Characterization EE5342, Lecture 7-Spring 2004. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. MidTerm and Project Tests. MidTerm on Thursday 2/12 Cover sheet to be posted at http://www.uta.edu/ronc/5342/tests/

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Semiconductor Device Modeling and Characterization EE5342, Lecture 8-Spring 2002

Semiconductor Device Modeling and Characterization EE5342, Lecture 8-Spring 2002. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Effect of carrier recombination in DR. The S-R-H rate ( t no = t po = t o ) is. Effect of carrier rec. in DR (cont.).

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Deviations from the Ideal I-V Behavior

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Empirical Observations of V BR

Chapter 6. pn Junction Diodes: I - V Characteristics. Dominant breakdown mechanism is tunneling. Empirical Observations of V BR. V BR decreases with increasing N,. V BR decreases with decreasing E G. V BR : breakdown voltage. Chapter 6.

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Empirical Observations of V BR

Chapter 6. pn Junction Diodes: I - V Characteristics. Dominant breakdown mechanism is tunneling. Empirical Observations of V BR. V BR decreases with increasing N,. V BR decreases with decreasing E G. V BR : breakdown voltage. Chapter 6.

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Lecture Notes

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Lecture Notes #9: Class #11

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