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Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler. Some composition assumption for sample grown at 225C. S230 grown at 300C Si Comp = 22.9 at.%. S239 grown at 225C Si Comp = 27.8 at.%. Things I noticed:. (022) intensity higher for 225C growth at Heusler Comp

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313 views • 19 slides
Paper D28:0010 : March APS Meeting, Pittsburgh, PA, March 16, 2009

Paper D28:0010 : March APS Meeting, Pittsburgh, PA, March 16, 2009

Effects of Si on the Electronic Properties of the Clathrates A 8 Ga 16 Si x Ge 30-x (A = Ba, Sr). Paper D28:0010 : March APS Meeting, Pittsburgh, PA, March 16, 2009. Emmanuel N. Nenghabi * and Charles W. Myles * Deceased. For more details: See

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272 views • 13 slides
Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler. Some composition assumption for sample grown at 225C. S230 grown at 300C Si Comp = 22.9 at.%. S239 grown at 225C Si Comp = 27 at.%?. Things I noticed:. (022) intensity higher for 225C growth at Heusler Comp

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213 views • 9 slides
Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler.

Comparing XRD data for 225C and 300C growth of Si-Heusler. Some composition assumption for sample grown at 225C. S230 grown at 300C Si Comp = 22.9 at.%. S239 grown at 225C Si Comp = 27 at.%?. Things I noticed:. (022) intensity higher for 225C growth at Heusler Comp

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157 views • 7 slides

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