'Spin injection' presentation slideshows

National Institute of Advanced Industrial Science and Technology (AIST)

Silicon spintronics. Ron Jansen S. Sharma, A. Spiesser, K. R. Jeon, S. Iba, H. Saito, S. Yuasa. National Institute of Advanced Industrial Science and Technology (AIST) Spintronics Research Center Tsukuba, Japan. In collaboration with:

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JAIRO SINOVA

Anomalous and Spin-Hall effects in mesoscopic systems. JAIRO SINOVA. ICNM 2007, Istanbul, Turkey July 25 th 2007. Research fueled by:. NERC. Mario Borunda Texas A&M U. Alexey Kovalev Texas A&M U. Nikolai Sinitsyn Texas A&M U. U. of Texas. Ewelina Hankiewicz U. of Missouri

668 views • 51 slides

IV Phenomena and Devices

IV Phenomena and Devices. Direct detection of spin injection All-Metal structures and Domain Wall Velocity The magnetophotovoltaic effect in Schottky junctions MgO barrier magnetic tunnel junctions Planned work. Staff, Publications. Plamen Stamenov Postdoc from November 2007

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From ferromagnetic to non-magnetic semiconductor spintronics: Spin-injection Hall effect

From ferromagnetic to non-magnetic semiconductor spintronics: Spin-injection Hall effect. Tom as Jungwirth. Universit y of Nottingham Bryan Gallagher, Richard Campion, Kevin Edmonds , Andrew Rushforth, et al. Institute of Physics ASCR

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Spin Electronics

406 views • 24 slides

Introduction to Spintronics

Introduction to Spintronics. Electron has : Mass Charge Spin Spintronics =spin based electronics information is carried by spin not by charge ferromagnetic metallic alloy based devices transport in fm materials is spin polarized. Introduction.

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SEMICONDUCTOR SPINTRONICS

SEMICONDUCTOR SPINTRONICS. Spin as new degree of freedom in quantum device structures. George Kioseoglou Materials Science and Technology, University of Crete. Research Activities. tunnel barriers Shottky Al 2 O 3 MgO. magnetic contacts ZnMnSe Fe FeGa MnGa. semiconductors

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CECAM June 2003, Lyon (FR)

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Ferromagnetic Quantum Dots on Semiconductor Nanowires

Ferromagnetic Quantum Dots on Semiconductor Nanowires. Rouin Farshchi EE235 3/7/07. D. G. Ramlan et. al., Nano Letters 6, 50-54 (2006). 1. Spintronics. GMR heads in hard-drives (IBM). Two key requirements: 1- Injection of spin-polarized current 2- Room temperature operation.

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Nanoelectronics

Nanoelectronics. Lecture 9 Magnetics and Spintronics Qiliang Li. Ferromagnetic Materials. Any material that could exhibit spontaneous magnetization: a net magnetic moment in the absence of an external magnetic field. Completely polarized or partially polarized

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Nanoscale control of structure and properties

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Studied effect of oxygen defects on spin tunneling (TMR) in magnetic tunnel junctions

Spin transport studies in band and interface tailored materials: towards total spin polarization for spin electronics Jagadeesh Moodera, Massachusetts Institute of Technology , DMR 0504158.

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B. D. McCombe, University at Buffalo; DMR 0203560

Novel Optical Investigations of Spin Dependent Effects in Semiconductor Nanostructures. ~1eV. B. _. +. nm. 100/20. 120. 30. 200. AlAs 0.15 Sb:Be. B. D. McCombe, University at Buffalo; DMR 0203560.

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Optical Spin Transfer in Ferromagnetic Semiconductors

001. 0.015. ]. 3. 0.010. E [meV/nm. z. z. z. z. z. z. 0.005. 100. 110. x. x. x. x. x. x. 0.000. 001. 110. 001. 100. m J =1/2. m J =-1/2. J=1/2. 1. 1. 1/3. m J =-3/2. m J =-1/2. m J =3/2. m J =1/2. M y ,M z. M x.

178 views • 1 slides