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Origin of Coulomb Blockade Oscillations in Single-Electron Transistors

Origin of Coulomb Blockade Oscillations in Single-Electron Transistors Fabricated with Granulated Cr/Cr 2 O 3 Resistive Microstrips. Xiangning Luo, Alexei O. Orlov, and Gregory L. Snider University of Notre Dame, Dept. of Electrical Engineering, Notre Dame, IN 46556. Outline.

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Step edge junctions - PowerPoint PPT Presentation

Origin of Coulomb Blockade Oscillations in Single-Electron Transistors