'Strong inversion' presentation slideshows

MOS Field-Effect Transistors for High-Speed Operation

D.L. Pulfrey. Department of Electrical and Computer Engineering University of British Columbia Vancouver, B.C. V6T1Z4, Canada. pulfrey@ece.ubc.ca. http://nano.ece.ubc.ca. MOS Field-Effect Transistors for High-Speed Operation. Day 4A, May 30, 2008, Pisa. Si MOSFET features. 4 terminals

623 views • 41 slides

ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 33, 02 Apr 14. Chp 06: MOSFETs Channel Current I DS (n-channel p-substrate) Examples Theory Goal: I DS in charge sheet constant mobility model,

346 views • 34 slides

Paulo Moreira March 1 st , 2005 CERN - Geneva, Switzerland

ELEC-2005 Electronics in High Energy Physics Spring Term Introduction to VLSI Digital Design Part 1. Paulo Moreira March 1 st , 2005 CERN - Geneva, Switzerland. Outline. Introduction Transistors The CMOS inverter Technology scaling Gates Sequential circuits Storage elements Example.

297 views • 29 slides

ECE 875: Electronic Devices

ECE 875: Electronic Devices. Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu. Lecture 29, 24 Mar 14. Chp 04: metal-insulator-semiconductor junction: GATES Q, E , V/ y : W D , V i Capacitances. VM Ayres, ECE875, S14. Lec 26:. p-type Si.

276 views • 27 slides

EKV Compact Model Extension for High-Voltage Lateral DMOS Transistors

472 views • 18 slides

Outline

556 views • 16 slides