1 / 15

High-Brightness InGaN–GaN Power Flip-Chip LEDs

Shoou-Jinn Chang , Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin. High-Brightness InGaN–GaN Power Flip-Chip LEDs. JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009. Sum DJ. Outline. Introduction

talib
Download Presentation

High-Brightness InGaN–GaN Power Flip-Chip LEDs

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin High-Brightness InGaN–GaN Power Flip-Chip LEDs JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 27, NO. 12, JUNE 15, 2009 SumDJ

  2. Outline • Introduction • Experiment • Results and discussion • Conclusion • References

  3. Introduction • In this work, we report the fabrication of InGaN–GaN power flip-chip (FC) LEDs using grinding to rough the backside surface of sapphire substrate.

  4. Experiment Ag(200nm) Ni(1nm) ITO(15nm) SPS five-period In0.23Ga0.77N (5Å)/GaN(5Å) @1050ºC p+-GaN(0.25µm)@ 1050ºC EBL p-Al0.15Ga0.85N(50nm) @1050ºC MQW five-period In0.23Ga0.77N(3nm)/GaN(7nm) @770ºC Ti/Al/Ti/Au n+-GaN(3µm)@ 1050ºC GaNnucleationlayer(50nm) @ 550ºC Sapphire (2-inch) chip size:1mm × 1mm

  5. Results and discussion

  6. Results and discussion

  7. Results and discussion

  8. Results and discussion

  9. Results and discussion 455nm

  10. Results and discussion LED-I:366.5mW LED- II:271.8mW LED-III :185.1mW @700mA 700mA

  11. Results and discussion 0.35A

  12. Results and discussion

  13. Conclusion • We can achieve a 200 times larger peak-to-valley distance on the backside sapphire substrate by conventional lapping/polishing. • It was also found that we can simultaneously enhance output power and improve device reliability by roughening sapphire backside surface of the power FC LEDs.

  14. References • Shoou-Jinn Chang, Member, IEEE, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai,Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin“High-Brightness InGaN–GaN Power Flip-Chip LEDs,” J. Lightwave Technol. VOL. 27, NO. 12, JUNE 15, 2009

  15. Thanks for your attention !

More Related