2005 ITRS Public Conference Emerging Research Devices Seoul, Korea December 13, 2005

1. 2005 ITRS Public Conference Emerging Research Devices Seoul, Korea December 13, 2005 Jim Hutchby – SRC Mike Garner – Intel

2. ITRS Emerging Research Devices Working Group • George Bourianoff Intel/SRC • Joe Brewer U. Florida • Toshiro Hiramoto Tokyo U. • Jim Hutchby SRC • Mike Forshaw UC London • Tsu-Jae King UC Berkeley • Rainer Waser RWTH A • In Yoo Samsung • John Carruthers OGI • Lothar Risch Infineon • Ming-Jinn Tsai ERSO/ITRI • Wei-Tsun Shiau UMC • Peter Zeitzoff SEMATECH • Murali Ramachandran Freescale • Tobias Noll Aachen U • Erik DeBenedictis SNL • Lou Lome IDA • Mike Garner Intel • Makoto Yoshimi SOITEC • Kristin De Meyer IMEC • Tak Ning IBM • Philip Wong Stanford U. • Luan Tran Micron • Victor Zhirnov SRC • Simon Deleonibus LETI • Thomas Skotnicki ST Me • Yuegang Zhang Intel • Kentaro Shibahara Hiroshima U. • Fred Boeuf ST Me • Dan Hammerstrom OGI • Philippe Coronel ST Me • Phil Kuekes HP • Vwani Roychowdery UCLA • Christian Gamrat CEA

3. ITRSEmerging Research Materials Working Group Ted Kamins HP Richard Keihl U. Wisc. Phil Kuekes HP Louis Lome IDA Cons. Mark Lundstrom Purdue Kathryn Moler Stanford U. David Muller Cornell U. Ramamoorthy Ramesh UCB Mark Reed Yale Univ. Rafael Reif MIT Dave Roberts Air Products Morley Stone DARPA Sadasivan Shankar Intel Shinichi Tagaki U of Tokyo Tom Theis IBM Jim Tour Rice Univ. Ruud Tromp IBM John Henry Scott NIST Rainer Waser Aacken U. Stan Williams HP In Kyeong Yoo Samsung Kang Wang UCLA Dimitri Antoniadis MIT Marc Baldo                MIT Karl Berggren           MIT Charles Black IBM Dawn Bonnell Penn. Univ. Alex Bratkovski HP George Bourianoff Intel John Carruthers Port. St. Univ. Sang Wook Cheong Rutgers Univ Supriyo Datta Purdue Univ. Alex Demkov U. Texas Steve Erwin NRL M. Garner Intel, Chair Bruno Ghyselen SOITECH Dan Herr SRC Susan Holl Intel Jim Hutchby SRC Berry Jonker NRL Gerhard Klemick Purdue Univ. Eric Vogel NIST Victor Zhirnov SRC Igor Zutic NRL

4. Develop an Emerging Research Devices chapter to: Critically assess currently proposed approaches to Information Processing beyond ultimate CMOS Identify promising new approach(es) to Information Processing technology to be implemented by 2020 To offer substantive guidance to – Global research community Relevant government agencies Technology managers Suppliers Charter of ERD Chapter

5. Bulk CMOS Double-Gate CMOS New Memory and Logic Technologies New Architecture Technologies Nanotubes Molecular devices Quantum cellular automata Emerging Information Processing Concepts Scope of Emerging Research Devices2003

6. New Materials Model Knowledge 0 1 Scope of Emerging Research Devices2005 New Memory and Logic Technologies New Architecture Technologies Nanotubes Molecular devices Spin states Emerging Information Processing Concepts

7. Gate S D Devices & Material Interplay Device Concept Determines Material Properties Material properties optimized for device Critical Properties = Properties for Device Operation Example: CNT DOS, Eg & meff αf(chirality & diameter) Device Electrical Properties Material Properties

8. Required characteristics: Scalability Performance Energy efficiency Gain Operational reliability Room temp. operation Preferred approach: CMOS process compatibility CMOS architectural compatibility What are we looking for? Alternative state variables • Spin–electron, nuclear, photon • Phase • Quantum state • Magnetic flux quanta • Mechanical deformation • Dipole orientation • Molecular state Alternative state variables (Beyond Charge State) • Spin state • Molecular state • Strongly coupled electron state • Phase state • Quantum state • Magnetic flux quanta • Mechanical deformation • Dipole orientation

9. A Taxonomy for Nano-Information Processing Hierarchy Computational models Bio inspired Quantum Analogue Digital Architec- tures Reconfigurable Quantum Cellular arrays Bio inspired Boolean Molecular state Phase state Electric charge State variables Scaled CMOS Spin orientation RTDs 1D FETs Molecular SETs Devices Ferromagnetic Spintronic

10. Single Gate Non-classical CMOS Transfer to PIDS/FEP in 2005

11. Multiple Gate Non-classical CMOS Transfer to PIDS/FEP in 2005

12. Move to PIDS/FEP in 2005 ERD Remove SET Memory from 2005 ERD Emerging Research Memory Devices

13. IN/OUT Reason for IN/OUT Comment Nano-Ferroelectric FET memory IN Based on physics of operation, this memory has new potential not found in FERAM Some features of Nano-Ferroelectric memory: Nanoscale FE capacitor, non-destructive readout Polymer Memory IN New materials structure, promising characteristics PM is different from MIM memory: it consist g MIMIM structure Single electron memory OUT Does not fit any of the application categories Small retention time, slow write, SER Emerging Research Memory Devices(Additional Changes in 2005)

14. Device 3 - 5 6 7 FET RS FQ 1D Resonant SET Molecular QCA Spin transistor structures Tunneling Devices Emerging Research Logic Devices Replace with Ferromagnetic Logic Remove RSFQ from 2005 ERD Remove E:QCA from 2005 ERD

15. > 20 >16 - 18 >18 - 20 < 16 For each Technology Entry (e.g. 1D Structures, sum horizontally over the 8 Criteria Max Sum = 24 Min Sum = 8 Critical EvaluationMemory

16. > 20 >16 - 18 >18 - 20 < 16 For each Technology Entry (e.g. 1D Structures, sum horizontally over the 8 Criteria Max Sum = 24 Min Sum = 8 Critical EvaluationLogic

17. ? ? “Guiding Principles” Section Top Down Approach • Driven by Principles • Not Based on solely on Charge • Non Thermal Equilibrium • Novel Energy Transfer • Nanoscale Thermal Management • Sub-lithographic Mfg Process • Spin-based System? • Molecular based System? • Multiferroics/Orbitronics?

18. New Emerging Research Section Revised the Nano-architectures Section – Added Reconfigurable Implementations Emerging Memory Section Expanded the Baseline Memory Section – Include SRAM, NOR & NAND Flash in addition to DRAM Added new Prototype Section – Include FeRAM, MRAM, & PCRAM Changed Emerging Memory Section – Including Polymer Memory Emerging Logic Section Dropping Electronic Quantum Cellular Automata, Rapid Single Flux Quanta (RSFQ), and some Spintronic Logic (Dattta-Das transistor) Including Ferromagnetic Logic as a new entry New Critical Review Emerging Logic & Memory devices New Section of “Guiding Principles” looking forward to “Beyond CMOS” information processing technologies. ERD Key Messages Materials