Silicon Carbide Market Size, Trends, Growth, Share, Opportunities and Forecast by 2022

1. Silicon Carbide Market Size, Trends, Growth, Share, Opportunities and Forecast by 2022 “The Silicon Carbide (SiC) Market size is expected to be valued at USD 617.4 million by 2022, at a CAGR of 17.4% between 2017 and 2022.” The Silicon Carbide (SiC) Market size is expected to be valued at USD 617.4 million by 2022, at a CAGR of 17.4% between 2017 and 2022. The factors such as the ability of SiC devices in semiconductor to perform at high temperature and high voltage and power, increasing demand for motor drives, ability to reduce the overall system size, and increasing applications of SiC in radio frequency (RF) devices and cellular base station are expected to drive the growth of silicon carbide market. Among all the major verticals of the silicon carbide, the power electronics vertical held the largest share of the market in 2016. The main driver for the growth of this market is owing to increasing use of SiC devices in power supply and inverter applications. The silicon carbide discrete device is expected to hold the largest share of the market during the forecast period. This is due to the high demand for SiC discrete devices that can be attributed to the fact that these devices have numerous applications including RF and cellular base station applications as well as in power supply and inverter applications. The market for SiC diode is expected to hold the largest share, and they are also expected to grow at the moderate CAGR during the forecast period. The growth is attributed to the wide usage of SiC diode in RF and cellular base station applications. On the other hand, SiC module is expected to grow at the highest CAGR owing to increasing application of SiC MOSFETs and SiC diodes in various applications. The SiC wafer size of 6-inch and above is expected to reach at the highest CAGR between 2017 and 2022. The demand for 6-inch and above SiC wafer is rising as these can facilitate the manufacturing of more number of devices as compared to 2 and 4 inches silicon carbide wafers. Download PDF Brochure @ https://www.marketsandmarkets.com/pdfdownload.asp?id=439

2. In terms of the different geographic regions, APAC held the largest market share in 2016 and expected to grow at the second-highest CAGR in the forecast period. Growth in the APAC silicon carbide market can be attributed to the enhanced use in RF and cellular base station devices, due to the expanding 4G network, and power supply and inverter application. The Americas accounted for the second-largest share in 2016. The growth is attributed to the presence of some of the major silicon carbide device manufacturing companies. The RoW is expected to grow at highest CAGR. Exponential growth in the RoW can also be attributed to the increased use of RF and cellular base station devices due to expanding cellular network. Market Overview (DROC) Drivers: Ability of SiC in semiconductor to perform at high temperature and high voltage & power, Increasing demand for motor drives is lining silicon carbide based devices in positive growth trajectory, SiC-based devices facilitates system size reduction, and application of SiC devices in RF and cellular base station. Restraints: GaN is competing with SiC Opportunity: Success of electro mobility, and increasing utilization of power semiconductor technology in renewable energy generation Challenge: SiC power devices packaging is a major challenge Request Sample Copy of this Market Research @ https://www.marketsandmarkets.com/requestCustomization.asp?id=439 Key Target Audience: Electronic design automation (EDA) and design tool vendors Original equipment manufacturers (OEMs) Integrated device manufacturers (IDMs) Original design manufacturers (ODMs) Automotive ODM and OEM technology solution providers Assembly, testing, and packaging vendors Technology, service, and solution providers Intellectual property (IP) core and licensing providers Suppliers and distributors Governments and other regulatory bodies Technology investors

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