Annealing effects on a-SiC:H and a-SiC:HF thin films deposited by PECVD at room temperature

Introduction. Khakani et al. reported that the annealing of a-SiC:H resulted in relaxation of thecompressive stress due to the dissociation of hydrogenated bonds (Si-H and C-H).. In this work, the annealing behaviors of fluorinated and non-fluorinated a-SiC:Hfilms deposited at room temperature un

Rita + Follow