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Normal LED is 7.7 Ω PI LED is 3.8 Ω

Plot of the relation between I(dV=dI) and I. Open circular and open square dots denote data from the I–V results and solid line is the fitting curve obtained using (1). n is the ideality factor K is Boltzman constant Rs is Series resistance. Normal LED is 7.7 Ω PI LED is 3.8 Ω.

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Normal LED is 7.7 Ω PI LED is 3.8 Ω

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  1. Plot of the relation between I(dV=dI) and I. Open circular and open square dots denote data from the I–V results and solid line is the fitting curve obtained using (1).

  2. n is the ideality factor K is Boltzman constant Rs is Series resistance Normal LED is 7.7 Ω PI LED is 3.8 Ω

  3. Optical output power-current-peak wavelength characteristics of normal and PI LEDs.

  4. Conclusion • Low p-contact resistance of LEDs causes an increase of current injection efficiency and a decrease of current crowding effect. • High-current stability of the output power and peak wavelength of the PI LEDs .

  5. Reference [1] S. Nakamura, S. Senoh, N. Iwasa, and S. Nagahama, “High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures,” Jpn. J. Appl. Phys., vol. 34, pp. L797–L799, Jul. 1995. [2] Y. Nakano and T. Jimbo, “Electrical characterization of acceptor levels in Mg-doped GaN,” J. Appl. Phys., vol. 92, pp. 5590–5592, Nov. 2002. [3] X. Guo and E. F. Schubert, “Current crowding and optical saturation effects in GaInN/GaN light emitting diodes grown on insulating substrates,” Appl. Phys. Lett., vol. 78, pp. 3337–3339, May 2001. [4] J. K. Sheu, G. C. Chi, and M. J. Jou, “Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al Ga N/GaN superlattice layers,” IEEE Electron. Device Lett., vol. 22, no. 4, pp. 160–162, Apr. 2001.

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