1 / 5

c -Si thin-film cell fabrication

c -Si thin-film cell fabrication. c -Si thin-film cell fabrication. p-type, ~4E19 – back-surface field (BSF), 100 nm. p-type, ~5E15 – absorber, 2~3 µm. c -Si. n-type, ~1E20 – emitter, 35 nm. SiNx ARC. GLASS. c-Si thin-film cell fabrication. Solid state crystallisation, 600C, ~25 hrs.

adrienne-orr
Download Presentation

c -Si thin-film cell fabrication

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. c-Si thin-film cell fabrication

  2. c-Si thin-film cell fabrication p-type, ~4E19 – back-surface field (BSF), 100 nm p-type, ~5E15 – absorber, 2~3 µm c-Si n-type, ~1E20 – emitter, 35 nm SiNx ARC GLASS

  3. c-Si thin-film cell fabrication • Solid state crystallisation, 600C, ~25 hrs • Rapid thermal annealing, ~1000C, 1 min • Hydrogenation, ~600C, 20 min H H H H H H

  4. c-Si thin-film cell fabrication LOAD Reflector BSF emitter

More Related