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Zincite Properties . Growth methods . Applications .

Zincite Properties . Growth methods . Applications. ZnO. Kortunova E.V., Dubovskiy A.B., Filippov I.M., Kaurova I.A. - Mineral Ltd. 1, Institutskaya st., Alexandrov, Vladimir Region 601650, Russia. Applications of ZnO crystals. High quality crystal substrates. for ZnO heteroepitaxy.

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Zincite Properties . Growth methods . Applications .

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  1. ZinciteProperties. Growth methods. Applications. ZnO Kortunova E.V., Dubovskiy A.B., Filippov I.M., Kaurova I.A. - Mineral Ltd. 1, Institutskaya st., Alexandrov, Vladimir Region 601650, Russia

  2. Applications of ZnO crystals High quality crystal substrates • for ZnO heteroepitaxy • for optical waveguides • Phosphor • Luminescence • devices • scintillators • Light emitting diodes and semiconductor lasers for UV spectrum • Varistors • Electronic components • High-temperature diodes, transistors • Ultraviolet photoconverters • Ultrasonic emitters, receivers • Piezoelectronic devices • Piezoelectric transducers • Piezoresonance components • Discrete SAW-components, convolvers • Acoustoelectronics • Surface acoustic wave filters and resonators • Radiofrequency markers

  3. ZnO structure (11-20) projection Structural prototype – Wurtzite Hexagonal syngony Space group P63mc Lattice parameters: а=3,2495 А, с=5,2069 А (0001) projection

  4. ZnO main properties • Density – 5,64±0,01 g /cm3 • Melting point – 1975°С • Temperature of phase transition – 1870°С • Thermal conductivity – 49,1W/m· К • Hardness – 4 (by Mohs scale) • Width of district zone (bandgap) – 3.44 eV • Specific resistivity – 0,1..1 · 1013Om·cm • Mobility of carriers –180 cm2/V·s

  5. Elastic constant с11 - 209,718 GPa;s11 - 7.858 TPa-1 с12 - 121,14 GPa;s12 - -3.432TPa-1 с13 - 105,13 GPa; s13 - -2.206 TPa-1 с33 - 210,941 GPa; s33- 6.94 TPa-1 с44 - 42,449 GPa;s44- 23.57 TPa-1 с66 - 44,289 GPa;s66- 22.58 TPa-1 Permittivity 11s/0 – 8.33 33s/0 – 8.8 11t/0 – 9.26 33t/0 – 11.0 Piezomodule d15- -13.9*10-12 Cl/N;d31 - -5,2*10-12 Cl/N; d33- 10,6*10-12 Cl/N Optical parameters Refraction index wave-length,mkmn0 ne 0,45 2,105 2,123 0,5 2,051 2,068 0,8 1,959 1,975 1,4 1,9298 1,943 1,8 1,923 1,937 2,6 1,913 1,927 3,4 1,902 1,916 4,0 1,889 1,907

  6. Growth methods ofZnO • Growth from solution in • melt • Growth from gas phase • Growth by hydrothermal • method

  7. Growing ZnO single crystals from solution in melt mm/day mole % Solubility of ZnO in PbF2 melt. Grower diagram

  8. Growing ZnO single crystals by gas-transporting reactions method

  9. Hydrothermal method to obtain ZnO single crystals of large size • body of autoclave, • lining, • insert, • insert cover, • frame for seed suspension, • charge, • baffle, • thermocouple, • steel sealing ring, • hole in steel ring, • steel ring, • flange, • flange, • obturator, • bolt, • nut. • Working solution: mixture • 4М(КОН) + 1М(LiOH) + 0.1M(NH4OH) • Seeds: ZnO monoherdal or prism orientation • Size~ 80 mm • Cycle duration~180 days • Working temperature~ 300-350 ºС • Pressure~ 500 atm. • Temperature gradient between growth and dissolution chambers 8-15 ºС. • Thickness of crystals 25-30 mm

  10. Hydrothermal synthesis

  11. Dependency of zinc solubility from temperature Hydrothermal method Dependency of zinc solubility from KOH and NaOH concentration mass % mass % mass %

  12. Dependency of growth rate of positive monohedron from temperature Hydrothermal synthesis mm/day mm/day 1 – at temperature gradient 75 ºС 2 – at temperature gradient 50ºС 1 – according to calculation data 2 – according to experimental data

  13. Dependency of face (0001) growth rate from temperature gradient ∆Т at different concentration of LiOH Hydrothermal synthesis mm/day 1 - without LiOH 2 – 1.0М LiOH 3 – 2.0М LiOH 4 – 3.0 М LiOH

  14. Electrophysical parameters

  15. Transmission range Spectrum of photoluminescence Laser excitation 325,0 nm, 3,5 mW

  16. Conclusions: • Provided optimal conditions for hydrothermal growth it is possible to obtain high-quality ZnO single crystals. Furthermore, big size crystals (over 50 mm) can be grown while the main problem is absence of large seed material. • Hydrothermal technology allows to dope zinc oxide crystals with required admixtures. • On the basis of homogenious high-quality ZnO single crystals it is possible to design fast scintillators, effective high-frequency piezotransducers, acoustoelectronic devices, high-temperature sensors, elements of power high-temperature electronics. However, the major application of ZnO crystals will be the use as substrates for ZnO homoepitaxy to create optoelectronic devices.

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