Activité LPNHE en 2012 et 2013

1. Tracker upgrade Activité LPNHE en 2012 et 2013 G.Calderini

2. The LPNHE group is involved both in Phase-0 (IBL) and Phase-2 activities IBL Phase-0 • Simulations of sensors and evaluation productions • (during the last few years, now over for IBL) • - Testbeams • - IBL stave loading, testing and commissioning at Uni-GE and CERN • - Mechanics (see Didier’s transparencies) Phase-2 and core R&D • - Development of sensor simulations models • Edgeless sensors • Testbeam organization • Electronics and R&D on interconnections • ATLAS Track trigger (AM chip)

3. 3D Slim Edge • sensors (FBK +CNM) • - p-type • 230 um thick • 200 um inactive reg. • Planar Slim Edge • sensors (CiS) • - Oxygenated n-in-n • 200 um thick • guard rings under pixels • 215um inactive reg. (Option 1: 100% planar pixel sensors) Option 2: 75% planar pixel, 25% 3D

4. IBL schedule key dates LPNHE group should contribute to about two weeks of shifts (2012) and 3 weeks (2013) in the UNI-GE cleanroom

5. 2012 testbeam effort In 2012: 5 test-beams, about 30 persons in total to evaluate PPS and 3D (+DBM) The LPNHE group contributed with persons and hardware from our electronics pool.

6. Mechanics See Didiers’ transparencies

7. Phase-2 and core R&D Device simulations (Silvaco) General expertise Development of specific models Work to extend to n-in-p sensors the model of interface defect traps developed for n-in-n devices Insertion of intermediate levels in the gap to reproduce the Si/SiO2 interface defects After radiation and better describe the leakage current and breakdown behavior Good agreement with Measurements on our n-in-p device production

8. Edgeless sensors with DRIE (FBK/LPNHE project) Deep trench diffusion (to prevent electrical field on the damaged cut) ● Goal: make the rim zone equipotential ● How: DRIE as for 3D process ● Trench doped by diffusion Cut line • Trench definition is critical: • - aspect ratio: 20:1 • deep etching: 200-230um • trench width: 8-12um

12. Electronics Contributions to OmegaPix2 chips Interest for 65nm electronics LPNHE is also part of the AIDA EU project (providing a number of IP blocks for WP3) Expertise in radiation tests from previous experiments of people (BaBar / ILC) Support card for OmegaPix irradiation tests

13. One slide on track trigger • FastTracKer : a hardware track finder for ATLAS Trigger • Full silicon detector acceptance, pT > 1 GeV • Tracks with ~offline quality reconstructed parameters available to level-2 processors • FTK reads hits at L1 rate and reconstructs the event in ~100 μs • Two step algorithm: • Pattern recognition with Associative Memory (ASIC) • Linear PCA-based track fit with FPGAs • Associative Memory (AM) ASIC: the core processor of the pattern recognition stage. • Evolution of the AMchip03 of SVT (CDF) • Current prototype AMchip04 done and under testing: • 65 nm technology (SVT chip was 180 nm) • 8k patterns/chip (5k patterns/chip) • Ternary logic for variable resolution (new feature) AMchip05 (FTK final chip candidate): • 32k – 64k patterns • Serial links

14. Persons involved at LPNHE T.Beau (MdC, P7) M. Bomben (CDD-HN) G.Calderini (DR2 CNRS) J.Chauveau (PR, P6) G.Marchiori (CR2 CNRS) P.Schwemling (PR, P7) D. Laporte (IE, CNRS) F. Crescioli (IR, CNRS) F. Dematos (IR, CNRS) O.Le Dortz (IR, CNRS) J.F. Genat (IR, CNRS) L. Bosisio (invited from Univ.Trieste) R. Kass (invited from Ohio State U.) Funding / support expected/obtained from: ATLAS and laboratory (IN2P3) EUDET and AIDA EU projects Emergence (UPMC Project) EU FP7 (IAPP already approved project)

15. Realizations/expenses 2012 1) Phase-0 achievements using funds Testbeam and commissioning Mechanics prototyping Cleanroom material Expenses IBL (missions excluded) 5 KE

16. 2) Phase-2 achievements using funds FBK sensor production support Participation to n-in-p slim productions (MPI, down to 150um) as support for interconnection studies (see Abdenours’ talk) 3 KE FE-I4 wafer procurement 4 KE Thin detector production (MPI) 10 KE Semiconductor parameter analyzer (cards still to buy) Total of 22KE engaged out of 21 received

17. Funding requests for 2013 1) ATLAS related general needs 5 KE cleanroom ordinary metabolism (+ 18KE asked to Christophe to equip the Semiconductor parameters analyserwith SMUs) 2) Strictly IBL-related 0 KE

18. Funding requests for 2013 3) More general R&D 0* KE interconnections 30 KE edgeless R&D (bump-bonding of produced devices, already mentioned last year) 5 KE SIMS on produced devices 4 KE Support to ATLAS track trigger work 4 KE Mechanics 4) Participation in RD50 2 KE participation TOTAL: 50KE (Missions not dicussed here)

19. backup

20. Installation of a 4th pixel layer inside the current pixel detector: • performance of current pixel detector will degrade before main tracker upgrade (Phase 2) • maintain physics performance in high occupancy environment (higher granularity, r/o bandwidth) • increase radiation hardness (IBL fluence ~ 5x B-Layer fluence) •  Insertable B-Layer • 250 Mrad TID and 5x1015 neqcm-2 • installation originally planned for 2015-2016… advanced (in 2011) to 2013 (Fast-track IBL) • IBL mounted on new beam pipe • Length: ~64cm • Envelope: Rin = 31mm, Rout=40mm • 14 staves, 32 pixel sensors / stave. • Front-end chip: • FE-I4 (IBM 130 nm CMOS tech.) • 50μm x 250μm • 80(col) x 336 (rows) = 26880 cells. • 2cm x 2cm! Pixel IBL

22. A word on RD50 We have been contacted several times and invited to join the RD50 collaboration We think that this point has to be discussed more generally at ATLAS (/IN2P3) level. The fee is ~negligible (1400 CHF/year/group) but then sooner or later we will need to contribute to at least some of the RD50 detector productions (each time the contribution is typically of order of 5-10KE) Scientifically it would probably be worthwhile, but the funding aspect has to be discussed in ATLAS