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Supplementary Slides for Lecture 22

Supplementary Slides for Lecture 22. EE130/230M Spring 2013. The Impact of MOSFET Scaling. 1971. 2012.5. # of Transistors: 2300 3 billions Performance: 740 KHz > 3 GHz

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Supplementary Slides for Lecture 22

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  1. Supplementary Slides for Lecture 22 EE130/230M Spring 2013

  2. The Impact of MOSFET Scaling 1971 2012.5 # of Transistors: 2300 3 billions Performance: 740 KHz > 3 GHz Multiple-Core

  3. Ideal Long-Channel MOSFET (At Saturation Region)

  4. Non-Idealities in Long-Channel MOSFET Field-Effect Mobility Effective Oxide Thickness (Lec.18; Hu 5.8 ) (Lec.20, S4; Hu 6.3; Pierret 17.2.1) Channel Length Modulation Body Bias Effect (Lec.20, S18; Hu 7.9) (Lec.20, S14; Hu 6.4; Pierret 18.3.1) body-effect factor m = 1 + 3Toxe/Wdep body-effect parameter

  5. Additional Issues in Short-Channel MOSFET Short-Channel Effect (Lec.22, S12; Hu 7.9; Pierret 19.1.2) Drain-Induced Barrier Lowering Source/Drain Series Resistance Band-to-band Tunneling … Velocity Saturation (Lec.22, S4; Hu 6.8-9; Pierret 19.1.4)

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