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NNAI – practice L2. BJT differential amplifier. Main parameters of used transistors: NPN: Is = 2.10 -16 A = 100 Output characteristic slope in active region = 0.5 μ A/V at Ic=30uA (V E =60V) PNP: Is = 2.10 -16 A = 50
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NNAI – practice L2 BJT differential amplifier
Main parameters of used transistors: NPN: Is = 2.10-16 A • = 100 Output characteristic slope in active region = 0.5 μA/V at Ic=30uA (VE=60V) PNP: Is = 2.10-16 A = 50 Output characteristic slope in active region 1 μA/V při Ic=30uA (VE=30V) Nore: precise VTforT=300K is25.851241 mV Spice models can be find at http://www.umel.feec.vutbr.cz/~prokop/MNAI/MNAI.htm
Need of matching !!!!! Variance of the „hipo“ R over process and temperature in AMIS CMOS07: Rhipotyp = 2000 Ω/□ Rhipomin = 1600 Ω/□ Rhipomax= 2400 Ω/□ tc1 = -21.10-4 tc2 = 5.10-6 Variance Rhipo [Ω/□] pro t = (0-90)°C
Design bipolar differential stage with transconductance gm: 1
Determine input voltage asymmetry of the BJT differential stage knowing that due to the lithography variance the ratio of the BJT emitter areas is 1,1. means: Is1 = 1.1 Is2 Make sure the input offset is not ISS dependent… 2
Design differential output amplifier and gain A=10 Its quiescent current consumption is 40μA. VC = 5V -suppose Vbe = 0.65V 3
To satisfy demand of current consumption For voltage GAIN: Simulation PSpice 3
