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Co-sensitized quantum dot solar cell based on ZnO nanowire

Applied Surface Science 256 (2010) 7438–7441. Co-sensitized quantum dot solar cell based on ZnO nanowire. a School of Electronic Science and Engineering, Southeast University, Sipai Lou 2#, JinLing Yuan 109, Nanjing 210096, China

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Co-sensitized quantum dot solar cell based on ZnO nanowire

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  1. Applied Surface Science 256 (2010) 7438–7441 Co-sensitized quantum dot solar cell based on ZnOnanowire a School of Electronic Science and Engineering, Southeast University, Sipai Lou 2#, JinLing Yuan 109, Nanjing 210096, China b Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Science, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore c School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore a. J. Chena, J. Wua, W. Leia, b. J.L. Songb, W.Q. Dengb, c. X.W. Sunc Speaker：H. C. Chen Advisor：H. C. Kuo

  2. Outline • Introduction • Experiment • Results and Discussion • Conclusions

  3. Introduction • CdS and CdSe QDs co-sensitized solar cell based on ZnO nanowire were studied in this work. • The co-sensitized structure has better performance than the single CdS or CdSe sensitized solar cell. • The power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell • Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms).

  4. Experiment • ZnO nanowire was grown by a hydrothermal method at 95 ◦C. • The chemical bath deposition (CBD) method was used to assemble CdS QDs onto ZnO film. • ZnO film with CdS QDs immersed into pre-synthesized CdSe ethanol solution for 6 h. • The ZnO/CdS and ZnO/CdS/CdSephotoelectrodeswere assembled with a 20 nm platinum-coated indium tin oxide (ITO) substrate as the counter electrode. • They measured I-Vcurve , EQE , and EIS to analyze this cell. electrolyte Zno/Cds/CdSe ITO

  5. Results and Discussion • It can be seen that the optical range of ZnO/CdS/CdSe is broader than ZnO/CdS and ZnO/CdSe. • Both the conduction and valence bands positions of the three materials increase in the order: ZnO < CdS < CdSe, which is benefit for the electrons to transfer.

  6. Results and Discussion – SEM & TEM • ZnO nanostructure consists of nanorodarray on the bottom and the finer wires with 50nm in diameter and 9–10 µm length on the top.

  7. Results and Discussion – J-V curve • The higher performance of ZnO/CdS/CdSe is attributed to its broader light absorption range which leads to a higher photocurrent.

  8. Results and Discussion - EIS • The electron lifetime is calculated to be 6.2 and 13.8ms for ZnO/CdS and ZnO/CdS/CdSe device. • It is possibly due to the better coverage of ZnO/CdS/CdSephotoelectrode

  9. Conclusions • ZnO/CdS/CdSe has a better performance than ZnO/CdS, which is attributed to its broader light absorption range and better coverage of QDs on ZnO nanowires. • EIS measured demonstrated longer electron lifetime for ZnO/CdS/CdSe than ZnO/CdS. • A PCE of 1.42% was achieved for ZnO/CdS/CdSe, which accounts for 54% improvement compared to ZnO/CdS device.

  10. Thanks for your attention~

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