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Total Dose and SEE of Metal-To-Metal Antifuse FPGA. J. Wang, B. Cronquist, J. McCollum, F. Hawley, D. Yu, R. Chan and R. Balasubramanian Actel Corporation, Sunnyvale, California R. Katz NASA/GSFC, Greenbelt, Maryland I. Kleyner Orbital Science Corporation, Germantown, Maryland. Outline.
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Total Dose and SEE of Metal-To-Metal Antifuse FPGA J. Wang, B. Cronquist, J. McCollum, F. Hawley, D. Yu, R. Chan and R. Balasubramanian Actel Corporation, Sunnyvale, California R. Katz NASA/GSFC, Greenbelt, Maryland I. Kleyner Orbital Science Corporation, Germantown, Maryland
Outline 1. Introduction to M2M antifuse FPGA 2. Total Ionizing Dose 3. Single Event Effects • SEU • SEL • SEDR 4. Summary
RT54SX • 16k, 32k, 72k gate antifuse FPGA • 0.6mm (3.3/5.0V), 0.25mm (2.5/3.3/5.0V) CMOS technology • Commercial foundry
Combinatorial Cell Register Cell PSETB D0 DIN S1 S0 D1 Y Y D Q D2 DC IN D3 Sa Sb HCLK CLKA, CLKB DB CKS CKP CLRB A0 B0 A1 B1 Basic Logic Modules
Metal 3 Metal-to-Metal Antifuse Metal 2 Via Metal 1 Contact Silicon M2M Antifuse
SX Pin-to-Pin Performance • Fast, Flexible Array Logic and Routing • Fast pin-to-pin timing Input TPD 0.6ns TIRD1 0.3ns Array C-Cells TFC 0.3ns TINYH/INYL 1.5ns TPD 0.6ns TFC 0.3ns TPD 0.6ns Output TRD1 0.3ns TDLH/DHL 1.6ns Total Pin-to-Pin Timing, 32-bit Decode 6.1ns Numbers shown for A54SX16-3, worst case commercial conditions
RTSX TID • 0.6mm • Tolerance limited by static ICC • 100krad(Si) • 0.25mm • Tolerance limited by static ICC • Shallow trench isolation • 65krad(Si) before improvement, 250krad(Si) after improvement
IN FF 1 Voter OUT FF 2 FF 3 CLK SEU-Hard TMR Flip-Flop
Heavy Ion N+ N+ Single Strike Double Upset in SEU Hard FF Simulated by using Space Rad 4.0, Multiple-Bit Upset module Active Junction in FF2 Active Junction in FF1
Single Event Latchup • RT54SX is latchup immune, i.e., LETth >120MeV-cm2/mg
Heavy Ion Top Metal VCC Dielectric Bottom Metal Single Event Dielectric Rupture • Antifuse structure 1: Both 0.6mm and 0.25mm are immune to SEDR. • Antifuse structure 2: 0.6mm • Original structure has LETth=40MeV-cm2/mg at VCC=3.3V. • New recipe is immune (no rupture at right angle incidence, LET=60MeV-cm2/mg, VCC>3.6V). E-fieldM2M ~3.3V/700A ~0.5MV/cm E-fieldONO ~5V/100A ~5MV/cm
SUMMARY • TID • RTSX has good tolerance, 50k-100krad(Si). • Smaller geometry shows potential for higher tolerance. • SEU • 0.6mm RTSX shows better tolerance than ACT2, ACT3 (ONO). • FF LETth: SX=11, ACT2/3=4 • CC LETth: SX>40, ACT2/3=20 • 0.25mm RTSX have hardened FF option. • SEL • RT/RHSX are immune. • SEDR • RT/RHSX are immune.