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NEW ANALYTIC DC MODELS FOR TUNNEL DIODE AND RESONANT TUNNELING DIODE

NEW ANALYTIC DC MODELS FOR TUNNEL DIODE AND RESONANT TUNNELING DIODE. Chien M. Ta (SMA) Fujiang Lin (IME) Subhash R. Chander (IME) SYMPOSIUM ON ELECTRONICS June 2004. Outline. Introduction Literature reviews Approach and tools Achievements Remarks and discussions. Introduction.

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NEW ANALYTIC DC MODELS FOR TUNNEL DIODE AND RESONANT TUNNELING DIODE

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  1. NEW ANALYTIC DC MODELS FORTUNNEL DIODE AND RESONANT TUNNELING DIODE Chien M. Ta (SMA) Fujiang Lin (IME) Subhash R. Chander (IME) SYMPOSIUM ON ELECTRONICS June 2004

  2. Outline • Introduction • Literature reviews • Approach and tools • Achievements • Remarks and discussions Symposium on Electronics 2004

  3. Introduction • Motivations • UWB system design • Currently, no RTD’s model in commercial EDA tools • Objectives • Analytic expressions for the I-V characteristic curves of TD and RTD Symposium on Electronics 2004

  4. Reviews Existing models • Piecewise linear model(Tai-Haur Kuo et al., Ralph P. Santoro) • Polynomial fit model (M. R. Deshpande et al.) • Gaussian-exponential combination (Zhixin Yan and M.J.Deen) • Physics-based model (J. N. Schulman et al.) What are the interesting features of tunnel diode and resonant tunneling diode? I-V characteristic • Negative differential resistance (NDR) • Fast • Temperature insensitivity Symposium on Electronics 2004

  5. Modeling • Analytical approach • Tools: MATLAB, IC-CAP Symposium on Electronics 2004

  6. Methodology I-V characteristicmeasurement Mathematic analysis Model proposal Unsatisfactory match Simulation Compare Final model Satisfactory match Symposium on Electronics 2004

  7. TD modeling - Measurement IC-CAP setup for measuring I-V characteristic Measured I-V characteristic Symposium on Electronics 2004

  8. Analytic model where I-V characteristic Is_fwd nfwd Is_rev nrev Ip Vp A Symposium on Electronics 2004

  9. Simulation Final RMS error = 0.95% Maximum error = 2.28% I-V characteristic with extracted values I-V characteristic with optimized values Symposium on Electronics 2004

  10. New model for resonant tunneling diode where I-V characteristic A    IS n Symposium on Electronics 2004

  11. Simulation Simulation result Final RMS error = 3.813% Symposium on Electronics 2004

  12. Symmetric characteristics for RTD where Symmetric I-V characteristic Simulation result Symposium on Electronics 2004

  13. One model for both TD and RTD ? Recognizable deviation in the reverse-biased region (not very critical since the devices are usually biased in the NDR region) Final RMS error = 1.03% Not much degradation compared to 0.95% RMS error of the TD’s model Symposium on Electronics 2004

  14. Remarks, conclusion, and future works • Remarks • Excellent match between simulation and measurement: RMS error is less than 1% for TD and 3.8% for RTD • Need accurate measurement, especially for ac modeling: de-embedding technique • Need modification to have scalability • Conclusion • The new DC model for the RTD is sufficient to describe the behaviors of the devices • Future works • AC model expansion • Implementation into EDA tools • Coding in Verilog-A Symposium on Electronics 2004

  15. THANK YOU Symposium on Electronics 2004

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