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POSITION OF MRG IN EUROPEAN MICROELECTRONICS European or international funded projects

GaAs Microwaves ESPRIT 1270 (1987-1989) ESPRIT 2035 (1989-1991) ESPRIT 3086 (1989-1991) ESPRIT 5031 (1990-1992) ESRPIT 5018 (1990-1992) ESPRIT 9500, No. 19 (1993-1995) ESPRIT 21315 (1996-1997) COPERNICUS CIPA-CT 94-0197 (1995-1998) INCO “MEMSWAVE” (1998-2001) NATO SfP-974172 (1999-2003)

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POSITION OF MRG IN EUROPEAN MICROELECTRONICS European or international funded projects

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  1. GaAs Microwaves ESPRIT 1270 (1987-1989) ESPRIT 2035 (1989-1991) ESPRIT 3086 (1989-1991) ESPRIT 5031 (1990-1992) ESRPIT 5018 (1990-1992) ESPRIT 9500, No. 19 (1993-1995) ESPRIT 21315 (1996-1997) COPERNICUS CIPA-CT 94-0197 (1995-1998) INCO “MEMSWAVE” (1998-2001) NATO SfP-974172 (1999-2003) NATO SfP-973796 (1999-2004) GaAs Optoelectronics RACE 1027 (1988-1990) ESPRIT 2289 (1989-1991) ESPRIT 28998 (1998-2000) HCM CHRXCT940428 (1995-1997) IST FET-ASSESS (2001-2002) SiC BRITE/EURAM 5416 (1993-1996) INTAS (1999-2001) NATO SfP- 971879 (1999-2002) NATO SfP-978011(2002-2005) GaN IST FET-ASSESS (2001-2002) POSITION OF MRG IN EUROPEAN MICROELECTRONICS European or international funded projects

  2. Ongoing research activities GaAs: Tunable laser diodes by Stark effect MMICs and RF-MEMS Quantum Dots SiC: SiC-based microwave devices and SiC nanostructures GaN: GaN HEMTs Quaternary nitrides for better blue LDs

  3. 75µm P Contact :Pt/Ti/Pt/Au Active area p 2.5µm N 250µm N doped GaAs Substrate N Contact: Ni/Au/Ge/Ni/Au Ceramic In/Sn Tunable laser diode by Stark effect In this work, the active region of the laser diode is designed such that the injection current generates a space-charge field which tunes the lasing wavelength. For the time being, we have demonstrated Stark shifts of the lasing wavelength of about 5nm in a InGaAs/AlGaAs diode. 3 nm

  4. First Cretan Quantum Islands Single layer of InAs islands, self-assembled on GaAs (100) substrates, fabricated by molecular beam epitaxy.

  5. Highlights of SiC-related activities. Study of heteroepitaxy and nanostructure formation in the 3C-SiC/Si material system. 2x2 mm Rows of 3C-SiC islands parallel to steps Develop microwave SiC-based devices 0.5x0.5mm 3cm Demonstration of first SiC-based IMPATT diode (0.3W at X-band)

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