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WHI - Project Review 2002 - Halbleiterlabor (HLL) -

WHI - Project Review 2002 - Halbleiterlabor (HLL) -. Projects at HLL Overview (list of main projects) CCD Development for ROSITA SDD Application (art analysis) DEPFET pixels for TESLA and XEUS Requirements for vertex detectors Technology development, design, simulation, prototyping

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WHI - Project Review 2002 - Halbleiterlabor (HLL) -

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  1. WHI - Project Review 2002- Halbleiterlabor (HLL) - • Projects at HLL • Overview (list of main projects) • CCD Development for ROSITA • SDD Application (art analysis) • DEPFET pixels for TESLA and XEUS • Requirements for vertex detectors • Technology development, design, simulation, prototyping • Comparison to other vertex detector concepts • Summary R. H. Richter - WHI Project Review Dec, 17th 2002

  2. Projects at HLL (1) – High Energy Physics • ATLAS SCT Strip detectors • Requirements: Single sided strips (p in n), radiation hardness up to 3x1014 neq/cm² • Concept (p in n), design, prototyping: HLL • Production: Hamamatsu, CiS (Erfurt) • Status: Series production (finished by Dec 2002), Acceptance tests at HLL • ATLAS Pixel sensors • Requirements: Pixel size 50x450 µm², • extremely radiation hard, 1x1015 neq/cm²!! • Concept, technology and design: HLL • Production: CiS (Erfurt), Tesla (Czech Republic)? • Status: Start of series production, HLL (support) • Linear Collider (TESLA): Thin and fast Active Pixel Sensors (see below) • CAST • Start of development at HLL: 2002 • End: 2005 • Aim: Search for solar axions • by use of an X-ray telescope equipped with PN-CCD (see talk by R. Kotthaus) R. H. Richter - WHI Project Review Dec, 17th 2002

  3. Projects at HLL (2) - Astrophysics • XMM • Launch of the satellite: 1999 • Aim: Study of galactic and extragalactic X-ray sources • Detector requirements: energy res., position res., time res. • Instrument: PN-CCD • ROSITA • Start of the development: 2000 • Scheduled Mission: 2007 - 2009 • Aim: Orbit scan 0.5~keV to 15~keV • Instrument: Optimized PN-CCD with frame store region • XEUS • Start of the development: 1996 • Scheduled start: 2015 • Aim: See XMM. But increased sensitivity by a factor 200, improved angular resolution, extended energy range • Instrument: Optimized PN-CCD with frame store region OR Active Pixel Detector (DEPFET) R. H. Richter - WHI Project Review Dec, 17th 2002

  4. ROSITA • Modified Repetition of ABRIXAS • Orbit scan: 0.5~keV to 15~keV • To be installed on ISS • Advanced PN-CCDs (separated image and • storage areas) • Prototypes produced in new laboratory R. H. Richter - WHI Project Review Dec, 17th 2002

  5. CDD Development for ROSITA and XEUS Fast transfer of signals into the frame store Slow (low noise) read out from the frame store Out of time event probability: 0.2% (factor 30 lower than at XMM)

  6. Improvement of Charge Transfer Effciency (CTE) Charge transfer loss is by a factor of 13 smaller than that of the XMM-CCD No Titanium contamination in the new CCDs by using of HE-implantation instead of an epitaxial layer.

  7. Low energy resolution C-K line 82eV FWHM Al-K line 76eV FWHM Achieved by an improved entrance window (use of <100> instead of <111> crystal orientation) and by a better electronic noise 3.5 e- rms (XMM: 4.5 e-)

  8. Compact X-ray fluorescence spectrometer Manuscript: Faust I by Johann Wolfgang v. Goethe Investigated at Bundesanstalt für Materialprüfung From the composition of the ink they concluded that parts of Faust I were corrected at a time when Goethe already worked on Faust II. Röntec-Spectrometer equipped with a Silicon Drift Chamber R. H. Richter - WHI Project Review Dec, 17th 2002

  9. Silicon detectors for LC vertex detector (TESLA) • Collaboration with Unversity of Bonn (N. Wermes) • WHI-HLL: Sensor • Bonn: Read out and steering chips • Synergy with XEUS Project (MPE) R. H. Richter - WHI Project Review Dec, 17th 2002

  10. TESLA Vertexdetector Options: CCD MAPS HAPS DEPFET Total > 500 MPixel (bei 25x25 µm Pixelgröße) (read out speed in 50 MHz) R. H. Richter - WHI Project Review Dec, 17th 2002

  11. Detector requirements for LC TESLA: • pixel size (20-30 µm)2 • 5(+)10/p sin3/2θ µm • sensor thickness d=50µm • Þ 0.1% X0 per layer • ( layer I @ r=13mm ) • DEPFET: Pmean< 1W • operation @ 300 K • 50MHz, read out speed • occupancy < 1% • 100-200krad (5 years) • 5 x 109 neq/cm2 • high position resolution (vertex reconstruction, • momentum resolution) • low radiation length of inner layers • low power consumption • (500MPixel + cooling additional material not • allowed) • high readout out speed for background • suppression • radiation tolerant R. H. Richter - WHI Project Review Dec, 17th 2002

  12. Module concept with DEPFETs • Sensor area thinned down to 50 µm • Remaining frame for mechanical stability • carrying readout and steering chips R. H. Richter - WHI Project Review Dec, 17th 2002

  13. Radiation ~1mm - - - + - + - + + - DEPFET-Principle ~300 mm FET integrated on high ohmic n-bulk Collection of electrons within the internal gate Modulation of the FET current by the signal charge! Advantages: Amplification of the charge at the position of collection => no transfer loss Full bulk sensitivity Non structured thin entrance window (backside) Very low input capacitance => very low noise R. H. Richter - WHI Project Review Dec, 17th 2002

  14. Excellent noise values measured on single pixels 55Fe-spectra @ 300K ENC = 4.8 +/- 0.1 e- R. H. Richter - WHI Project Review Dec, 17th 2002

  15. BioScope - imaging of tracer-marked bio-medical samples (P. Klein and W. Neeser) Noise: ca. 70 ENC @ 300K Slow operation (old technology) Large arrays are impossible (JFET => VP variations) Large cell size

  16. Rectangular DEPFET pixel detector MOS transistor instead of JFET A pixel size of ca. 20 x 20 µm² is achievable using 3µm minimum feature size. R. H. Richter - WHI Project Review Dec, 17th 2002

  17. DEPFET pixel matrix Low power consumption Fast random access to specific array regions • Read filled cells of a row • Clear the internal gates • of the row completely • - Read empty cells R. H. Richter - WHI Project Review Dec, 17th 2002

  18. imaging spectroscopy 7.68 x 7.68 cm² 1024 x 1024 pixels 1 Mpix 75 µm 300 ... 500 µm 4 el. ENC 1.2 msec 2.5 µsec purpose detector format pixel size thickness noise readout time / detector / row particle tracking 1.3 x 10 cm² (x 8) 520 x 4000 pixels (x 8) 2.1 Mpix (x8) 25 µm 50 µm ~ 100 el. ENC 50 µsec 20 nsec

  19. DEPFET 6” -Technology Double poly / double aluminum process on high ohmic n- substrate perpendicular to channel (with clear) along p-channel R. H. Richter - WHI Project Review Dec, 17th 2002

  20. Pixel prototype production (6“ wafer)for XEUS and LC (TESLA) Aim: Select design options for an optimized array operation (no charge loss, high gain, low noise, good clear operation) On base of these results => production of full size sensors Many test arrays - Circular and linear DEPFETS up to 128 x 128 pixels minimum pixel size about 30 x 30 µm² - variety of special test structures Production will be finished in spring R. H. Richter - WHI Project Review Dec, 17th 2002

  21. Depth 10µm Depth 7µm Depth 4µm Depth 1µm External (internal) Gates Sources n+ clear contacts Drain Cell size 36 x 27 µm² Potential during collection - 3D Poisson equation (Poseidon) (50µm thick Si, NB=1013cm-3,VBack=-20V) R. H. Richter - WHI Project Review Dec, 17th 2002

  22. Potential distribution during Reading 2D dynamic simulation along the channel ID adjusted to 100µA (W/L =18µm/5µm) Vinternal Gate ca. 3V Localized charge generation simulates a hit Back contact Internal Gate Source Drain R. H. Richter - WHI Project Review Dec, 17th 2002

  23. DEPFET simulation – TeSCA (2D, time dependent) hit response to a generation of 1600 electron-hole pairs

  24. Current production statusPixel array section – Design with clockable clear gate 1 Pixel cell • Status: • - Poly I and II ok • - Implantations (N-Side) ok • - P-Side Processing started • 8 lithographic steps ready • To do: • P-Side diode / entrance window - Contact openings • Metal 1 FS/BS => Measurements • Metal 2 4 / 6 mask steps until März `03 / Juni `03 Drain Gate Clear Clear gate Source R. H. Richter - WHI Project Review Dec, 17th 2002

  25. Crossing polysilicon lines Problems with demolished polysilicon lines and bad polyI/polyII insulation Solved now R. H. Richter - WHI Project Review Dec, 17th 2002

  26. Processing thin detectors- the Idea - R. H. Richter - WHI Project Review Dec, 17th 2002

  27. Detector thinning – first results Thickness of detector region : 50µm of frame : 350µm Size: 8cm x 1cm Wafer bonding – MPI f. Festkörperstrukturphysik, Halle Wafer grinding – SICO GmbH, Jena Anisotropic etching – CiS gGmbH Erfurt, MPI Halbleiterlabor Munich R. H. Richter - WHI Project Review Dec, 17th 2002

  28. Read out chip – test submission (Marcel Trimpl - Bonn)- fast current read out - 1,5mm 4 mm TSMC 0,25 µm process (ca. 60 000 transistors) contains all important parts of the design Measurements: Very encouring results with nearly TESLA requirements ! R. H. Richter - WHI Project Review Dec, 17th 2002

  29. Performance estimation of TESLA vertex detector candidates R. H. Richter - WHI Project Review Dec, 17th 2002

  30. 9th EUROPEAN SYMPOSIUM ON SEMICONDUCTOR DETECTORSNew Developments on Radiation Detectorstook place at Schloss Elmau, June 23 - 27, 2002 R. H. Richter - WHI Project Review Dec, 17th 2002

  31. Summary • Our part in ATLAS is almost done • Future projects: LC (TESLA), ROSITA, XEUS – encouraging CCD results • DEPFET is promising detector candidatefor future HE and astrophysics experiments. Key features: low noise, full bulk sensitivity, no charge transfer loss, low power consumption, random access within an array • A new DEPFET 6 inch technology (2 poly/ 2 aluminum) was developed for large arrays and high speed operation. • DEPFET Prototype production has been started and will be finished in spring ’03. • Read out electronic studies are very encouraging. • A concept for merging the DEPFET technology with a thinning technology is proposed. • Plans for 2003: Measurement and analysis of the prototype production • New Drift Chamber and CCD submissions R. H. Richter - WHI Project Review Dec, 17th 2002

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