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CIGS ink synthesis Stored with stirring

CIGS ink synthesis Stored with stirring as-made : ~15% of particles remained after 7000rpm centrifugation 1 day after : less particles remained after centrifugation 5 day after : no particles remained after centrifugation. (agglomerated particles). To prevent agglomeration:

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CIGS ink synthesis Stored with stirring

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  1. CIGS ink synthesis Stored with stirring as-made : ~15% of particles remained after 7000rpm centrifugation 1 day after : less particles remained after centrifugation 5 day after : no particles remained after centrifugation (agglomerated particles)

  2. To prevent agglomeration: Longer reaction time : 4hrs. -> 5hrs. Storing : As-made -> remove remaining precursors by centrifugation remove large particles and agglomerates by centrifugation add small amount of ligands

  3. Crystal structure Mo a:3.150 MoSe2 a:3.289 c:12.927 CuInSe2 a:5.814 c:11.63

  4. CIGS growth on (100)-oriented Mo 3.15 4.45 4.11 Mo (100) CIGS (112)

  5. CIGS growth on (110)-oriented Mo 5.81 4.45 2.52 2.73 3.15 5.81 Mo (110) CIGS (220/204)

  6. CIGS orientation vs. device efficiency • Most efficient devices have (220/204) oriented absorbers • (220/204) oriented films are: • More resistive • Bandgaps are lower • Lower sheet resistances • Higher efficiency due to increased fill factors • Easier diffusion of Cd2+ ions • Lower series resistance Reference Contreras, M. A.,  Jones, K. M.,  Gedvilas, L. and Matson, R. (2001) Proc. 16th Eur. Photovolt. Solar Energy Conf. p. 732. James & James , London

  7. MoSe2 3.29 (110) (001)

  8. MoSe2 (001)-oriented MoSe2: High series resistance Easily cleaved and peeled off • Parallel to c-axis • 3690Ω∙cm • 1μm – 0.37Ω∙cm2 • Perpendicular to c-axis • 2.5Ω∙cm • 1μm – 0.00025Ω∙cm2

  9. Substrate effect on CIGS process Cu,In,Ga,Se Se Cu-In-Ga alloy Co-evaporation : Nucleation on substrate surface Selenization : Nucleation on precursor surface or medium

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