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Spin Transfer in Spin-Orbit Coupled Nanostructures Kyungwha Park, Virginia Polytechnic Institute and State University, DMR 0804665.
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Spin Transfer in Spin-Orbit Coupled NanostructuresKyungwha Park, Virginia Polytechnic Institute and State University, DMR 0804665 The focus of our research activity is on understanding of spin transfer and electron transport in nanostructures where electron spin couples to orbital degrees of freedom. • Our first-principles study showed that interactions between single-molecule magnets Mn12 and a semi-metallic strongly spin-orbit-coupled Bi substrate induce significant changes in electronic properties of the Mn12 compared to those of a free Mn12. This change was supported by scanning tunneling microscopy experiments of Mn12 on Bi. • We examined interactions between nonmagnetic Si adsorption and strongly spin-orbit-coupled topological insulators (TIs) Bi2Te3 and Bi2Se3. Surprisingly, we found that even nonmagnetic interfaces can qualitatively modify properties of the surface states of Bi2Te3 and Bi2Se3, in contrast to previous model Hamiltonian studies. (a) (b)
Spin Transfer in Spin-Orbit Coupled NanostructuresKyungwha Park, Virginia Polytechnic Institute and State University, DMR 0804665 5 • Trained one graduate student (Yoh Yamamoto) and one undergraduate student (Michael Warnock) for the research project. • Presented outcomes of the research in conferences, workshops, and universities in the States, Spain, and Switzerland. Established collaboration with an experimental group in China. • Showed a possibility of tuning interactions between single-molecule magnets (SMMs) and substrates for potential device applications. • Found unexpected subtlety and an effect of non-magnetic interfaces on realistic topological insulators (Tis), which must be considered and can be used for phenomena and applications using TIs. Training students Presentations of results Research projects Collaboration with exp group in China Impact I: Tuning interactions between SMMs and substrates Impact II: Engineering TIs interfaced with other materials for devices